2020
DOI: 10.1021/acs.nanolett.0c02692
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Helicity-Sensitive Plasmonic Terahertz Interferometer

Abstract: Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene Field Effect Transistor connected to specially designed antennas. As a key result, we observe helicity-and phase-sensitive conversion of circularly-polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor int… Show more

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Cited by 24 publications
(12 citation statements)
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“…Integrated circuits based on CMOS technology are expected to be dominated in the development of subTHz and THz range imaging systems because of their advantage in design and fabrication of compact, low-cost, and low-power consuming microelectronic circuits. Graphene-CMOS integration can evolve as one possible technological trend [240]; a significant breakthrough can be predicted under use of plasmonic interferometry based on graphene field-effect transistors with special antennas, thus providing precise measurement of phase difference between two arbitrary phase-shifted THz signals [241].…”
Section: On-chip Solutions In Thz Imagingmentioning
confidence: 99%
See 1 more Smart Citation
“…Integrated circuits based on CMOS technology are expected to be dominated in the development of subTHz and THz range imaging systems because of their advantage in design and fabrication of compact, low-cost, and low-power consuming microelectronic circuits. Graphene-CMOS integration can evolve as one possible technological trend [240]; a significant breakthrough can be predicted under use of plasmonic interferometry based on graphene field-effect transistors with special antennas, thus providing precise measurement of phase difference between two arbitrary phase-shifted THz signals [241].…”
Section: On-chip Solutions In Thz Imagingmentioning
confidence: 99%
“…Phase-sensitive detection can be realized in graphene FET connected to specially designed antennas [241]: Here, the helicity-and the phase-sensitive conversion of circularly polarized radiation into dc photovoltage is caused by the plasmon-interference mechanism of two plasma waves in the channel, excited at the source and drain part of the transistor. The suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals.…”
Section: Homodyne Spectroscopy and Phase Sensitive Interferometrymentioning
confidence: 99%
“…Оказалось, что величины подвижности носителей заряда в графене (5400 и 28000 см 2 /В • с), полученные бесконтактным акустическим методом, гораздо больше величин подвижности (1100−1500 см 2 /В • с), полученных с помощью измерений вольт-амперных характеристик (ВАХ) графенового полевого транзистора (ГПТ), изготовленного из аналогичных образцов [11,12]. По-видимому, это объясняется несколькими факторами.…”
Section: обсуждение результатовunclassified
“…The interference of plasma oscillations in the channel of the field-effect transistors can be used to measure radiation polarization [ 110 ]. Sergey et al [ 111 ] fabricated a plasmonic interferometer based on GFET. After absorbing radiation, the source and drain of the GFET excite plasma waves and interfere inside the channel.…”
Section: Classification Of Graphene Terahertz Detectorsmentioning
confidence: 99%