Cleo: 2014 2014
DOI: 10.1364/cleo_si.2014.stu3h.7
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Helium ion microscope generated nitrogen-vacancy centres in type Ib diamond

Abstract: We report on position and density control of nitrogen-vacancy (NV) centres created in type Ib diamond using localised exposure from a helium ion microscope and subsequent annealing. Spatial control to <380 nm has been achieved. We show that the fluorescence lifetime of the created centres decreases with increasing ion dose. Furthermore, we show that for doses >1 Â 10 17 ion/cm 2 , significant damage of the diamond lattice occurs resulting in fluorescence quenching and amorphization. This places an upper limit … Show more

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Cited by 7 publications
(9 citation statements)
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“…μm contrast band inside the mask edge must be due to multiple scattering within the mask delivering a reduced ion dose to the diamond surface immediately below it. This multiple scattering can have lateral travel far exceeding expected vacancy diffusion: Contact mask edge spreading of over 10 m was observed for MeV helium ions implanted into diamond, a distance far exceeding expected vacancy diffusion of a few 100 nm under annealing conditions similar to our own [31], and we have observed similar effects with low He ion implant energies [16,32].…”
Section: Formation Of Shallow Nv Centerssupporting
confidence: 66%
See 1 more Smart Citation
“…μm contrast band inside the mask edge must be due to multiple scattering within the mask delivering a reduced ion dose to the diamond surface immediately below it. This multiple scattering can have lateral travel far exceeding expected vacancy diffusion: Contact mask edge spreading of over 10 m was observed for MeV helium ions implanted into diamond, a distance far exceeding expected vacancy diffusion of a few 100 nm under annealing conditions similar to our own [31], and we have observed similar effects with low He ion implant energies [16,32].…”
Section: Formation Of Shallow Nv Centerssupporting
confidence: 66%
“…NVs are found naturally at low concentration in the diamond lattice. This concentration can be increased near a surface by irradiating with electrons [14], neutrons [15], high energy ions [16,17], or femtosecond laser pulses [18] and has even allowed high resolution patterning via direct beams [16]. An annealing step is usually used to diffuse the vacancies which are captured next to the nitrogen atoms to form the NV centers.…”
Section: Introductionmentioning
confidence: 99%
“…These form exceedingly difficult technical challenges requiring higher microwave frequencies and powers, which might cause among other dielectric sample heating and demand more expensive equipment. However, electron spin resonance (ESR) spectroscopy has solved some of these technical hurdles by establishing microwave resonators and amplifiers in the X band (8 GHz -12 GHz) and Ka band (26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40) corresponding to an NV-NMR range of approximately 0.2 T to 1.5 T. Likewise, magnets with sufficient homogeneity and stability in the sub-ppm range are widely available at these magnetic fields. Reaching these magnetic fields is one of the major goals of our community and would enable NMR spectra equivalent to modern commercial benchtop NMR devices, however, with significantly lower sample volumes.…”
Section: Discussionmentioning
confidence: 99%
“…Likewise, a small fraction of P1 centers (< 0.5%) already captures vacancies during the CVD growth due to lattice strain 29 . However, the NV concentration is significantly improved by creating additional vacancies, which can be achieved by high-energy irradiation with, e.g., electrons [30][31][32] , ions 30,33 , or lasers 34,35 . Like implanted diamonds, subsequent high-temperature annealing will cause the vacancies and P1 centers to form NV centers.…”
Section: The Structure and Formation Of Nv Centersmentioning
confidence: 99%
“…Diamond is a promising material for quantum photonic applications due to it's unique chemical, physical and optical properties 18 . During FIB milling, momentum transfer from the ions to the target atoms above a critical dose 11 19 induces amorphisation of diamond within the ion interaction volume. For gallium based FIB milling this amorphisation damage profile is on the order of 46 nm at an ion energy of 30 keV, and the damage layer is heavily stained by implanted gallium ions 11 .…”
mentioning
confidence: 99%