Hemocompatibility Assessment of 3C-SiC for Cardiovascular Applications

Schettini, Norelli

doi:10.1016/b978-0-12-385906-8.00005-2

Cited by 19 publications

(18 citation statements)

References 71 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Changing of their disc-like shape, decrease of the circularity, formation of pseudopodias and the release of granules indicate that platelets undergo the resting state to the active state. 12,13,28 These formations are undesired, because they give rise to platelet aggregation followed by thrombotic events. Thrombosis can cause to limit the potential usefulness of many cardiovascular devices.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

High-strength ceramics as innovative candidates for cardiovascular implants

et al. 2019

View full text Add to dashboard Cite

Cytocompatibility and hemocompatibility are essential features for tissue- and blood-contacting implants such as artificial heart valves, vascular grafts and stents. Platelet activation as the main trigger of thrombosis results in implant failures. The purpose of this study results from the demands on anti-coagulant and non-corrosive innovative biomaterials for cardiovascular implants. Therefore, hemocompatibility and cytocompatibility of various high-strength ceramics, such as alumina, zirconia, silicon nitride and silicon carbide, were examined to identify the most appropriate ceramic for cardiovascular implants. In addition to the material species, different crystallographic structures (single- and poly-crystalline) and surface terminations (Si and C faces) of silicon carbide were used in order to reveal the interactions between blood and material surface. Three cell types, i.e. human umbilical vein endothelial cells, mesenchymal stem cells and blood cells, were cultured on the substrates and their interactions with material surfaces were analyzed. Cytotoxicity of the materials was tested by live/dead staining. Hemocompatibility in terms of platelet and white blood cell activation was examined via scanning electron microscopy and indirect ELISA. To mimic physiological conditions in vitro, the hemocompatibility of the materials was additionally analyzed in a bioreactor under dynamic flow conditions in comparison to static incubation. All ceramics were found to be cytocompatible for mesenchymal stem cells, human umbilical vein endothelial cells and blood cells. The highest number of resting, non-activated platelets was observed on the monocrystalline silicon carbide demonstrating that this material triggers the platelet activation less compared to the other materials. It is found to be the most appropriate ceramic for blood-contacting implants in terms of cell adhesion, cell viability, and hemocompatibility.

show abstract

Section: Discussionmentioning

confidence: 99%

“…Thus, the cells tend to minimize their surface areas by having circular shapes when they are not adhered to the specimen surface. 28…”

Section: Discussionmentioning

confidence: 99%

High-strength ceramics as innovative candidates for cardiovascular implants

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Silicon carbide biotechnology provides biocompatible and long-term in vivo application ranging from heart stent coatings and bone implant to neurological implants and sensors [10]. The main problem facing the medical community is the lack of biocompatible material that is also capable of electronic operation.…”

Section: Introductionmentioning

confidence: 99%

Characterization of nano-bio silicon carbide

Vlaskina¹,

Mishinova²,

Shaginyan³

et al. 2020

SPQEO

View full text Add to dashboard Cite

Plasma-enhanced chemical vapor deposition, reactive magnetron sputtering, hot-wire chemical vapor deposition and radio frequency plasma-enhanced chemical vapor deposition were used to develop technology for preparation of nano-bio silicon carbide coating of ceramic materials for dental applications. The effect of the bias voltage applied to the ceramic prostheses and dental crowns on the crystallization processes have been recognized. The optimal bias voltage applied to conductive substrate was –200 V, whereas for dielectric substrate the bias voltage Vbias did not affect the properties of SiC coating. The analysis of CVCs and spectroscopic diagnostics as the methods for studying the mechanism of interfacial rearrangements to investigate SiC phase transition in nano silicon carbide coatings were used. The conductivity of the SiC coating coincided with the conductivity on the dielectric (µn0 = 1012…1013 сm–1·s–1·V–1). The conductive substrate had a significant effect on the properties of the coating and thus depended on the bias voltage Vbias. The conductivity increased by three-four orders of magnitude (µn0 = 3·1017 сm–1·s–1·V–1), if the bias voltage Vbias = –200 V. The increase of the bias voltage (Vbias = –600 V) led to a decrease in the conductivity (µn0 = 1011…1012 сm–1·s–1·V–1). It was found that there was the double injection regime with bimolecular recombination in this structure with the dependence I = V3/2 for CVCs of SiC. The luminescence spectrum of SiC coating on non-dielectric ceramics (if Vbias = – 200 V during deposition) was significantly different from the luminescence spectrum of SiC coating on dielectric ceramics. Increasing the applied voltage to the substrate Vbias during deposition led to increasing the fraction of hexagonal polytypes. Directions in the crystal lattice according to the photoluminescence spectra were identified from the comparing the values of the width of the non-phonon parts of stacking faults and deep level spectra in the low-temperature photoluminescence with arrangements of atoms in the SiC lattice structure. The displacement of each atom participating in photoluminescence allowed to find the correlation with technology of SiC deposition and to develop technology of SiC coating on the dental materials.

show abstract

“…Recent progresses in silicon carbide (SiC) crystal, film's synthesis [1][2][3][4][5][6][7][8][9][10], and investigations of nano-polytype properties are highly important for applications in harsh environments [11], in optoelectronics [12,13] and spintronics [14,15], in quantum information processing [16][17][18], in biotechnology [19,20] and medicine [21,22]. Silicon carbide [23] can be a suitable prototype material for investigations of the polytypism phenomena in wide band semiconductors and binary materials.…”

Section: Introductionmentioning

confidence: 99%

Introducing a new atomic parameter of energy scale for wideband semiconductors and binary materials

2019

View full text Add to dashboard Cite

The fundamental concept in the science of dislocations is the study of the optical properties of semiconductors. The purpose of this work is to investigate the dependence of the structural features of the low-temperature photo luminescence (LTPL) spectra with the lattice parameters of wideband semiconductors and binary materials. A decoding method of the LTPL spectra of the binary polytypic structures of SiC was used. As a result, we introduce here for the first time a new i-unit atomic parameter of energy scale for the LTPL spectra of binary polytypic nanostructures. The i-unit parameter equals 4.3 meV, i.e. which equals 1/2 of the distance between adjacent Si-C layers and gives the exact multiples of the basic spectral parameters to tenths of meV. The i-unit of energy scale allows the simplifying method of spectral analysis of fine structures in SiC polytypes. The proposed new atomic i-scale allows us to monitor the processes of phase transformations up to 0.0787 Å. This allows observing the displacement in tetrahedron of silicon and carbon with dimensions 7.56 Å. The introduction of a new energy parameter makes it possible to control the displacement and position of atoms with very high accuracy, which in turn is very important for understanding the nature of defects in semiconductors. It is shown that phase transformations in SiC are related to dislocation in the crystal and implemented by the deformation and diffusion mechanisms. Due to results the diagram of the interlayer scheme radiative recombination with resulting dislocation levels was introduced.

show abstract

Hemocompatibility Assessment of 3C-SiC for Cardiovascular Applications

Cited by 19 publications

References 71 publications

High-strength ceramics as innovative candidates for cardiovascular implants

High-strength ceramics as innovative candidates for cardiovascular implants

Characterization of nano-bio silicon carbide

Introducing a new atomic parameter of energy scale for wideband semiconductors and binary materials

Contact Info

Product

Resources

About