HEMT materials and devices

InSituReduction of Charge Noise inGaAs/AlxGa1−xBuizert1, Koppens2, Pioro‐Ladrière3 et al. 2008Phys. Rev. Lett.8651012View full textAdd to dashboardCite

“…By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise. The GaAs/AlGaAs 2-dimensional electron gas (2DEG) has been of unparalleled importance in the field of mesoscopic physics [1] and has found wide commercial application in High Electron Mobility Transistors (HEMTs) [2]. Today, its unique electronic properties facilitate a variety of important developments, such as spin based quantum information devices [3], Kondo physics [4], electron interferometers [5] and counting statistics [6].…”

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

“…However, the incorporation of N often induces large number of nonradiative recombination (NRR) centers, resulting in severe degradation of material quality and consequently a poor luminescence efficiency. [6][7][8] In the photoluminescence (PL) measurement, a significant decrease in PL intensity with temperature was often observed and attributed to the activation of non-radiative recombination. 9,10 However, little is known about how the nonradiative recombination influences the PL decay dynamics in GaInNAs/GaAs quantum wells (QWs).…”

Effect of surface energy minima on the shape of self‐induced SiGe nanoislands

“…Self-induced Ge(SiGe) nanoislands grown on Si by molecular beam epitaxy (MBE) have been the subject of intense research in recent years. These structures are of great interest for both fundamental physics and opto-and nanoelectronics applications [1].…”