Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Lee, Kwang Hong; Bao, Shuyu; Lin, Yiding; Li, Wei; Anantha, P Chandrakasan; Zhang, Lin; Wang, Yue; Michel, Jürgen; Fitzgerald, Eugene A.; Tan, Chuan Seng

doi:10.1557/jmr.2017.324

Cited by 17 publications

(14 citation statements)

References 110 publications

(104 reference statements)

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“…A vertical PIN GeOI substrate was fabricated via the combination of ion implantation and wafer bonding. It began with a two-step epitaxial growth of a 1200 nm undoped Ge (i-Ge) layer on a Si wafer by CVD . A thin Ge layer with a thickness of 100 nm was first grown at 400 °C, followed by a subsequent growth of an 1100 nm Ge film at 600 °C.…”

Section: Methodsmentioning

confidence: 99%

“…It began with a two-step epitaxial growth of a 1200 nm undoped Ge (i-Ge) layer on a Si wafer by CVD. 33 A thin Ge layer with a thickness of 100 nm was first grown at 400 °C, followed by a subsequent growth of an 1100 nm Ge film at 600 °C. Thermal annealing was performed at 850 °C to reduce the TDD to 10 7 /cm 2 [Figure 1a(i)].…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…Considering the linear relationship between the Raman shift and strain in Ge, 30 it was calculated that 0.356% biaxial tensile strain remained in GeOI, resulted from the difference in the thermal expansion coefficient between Ge and Si, 31 which is comparable with other reported values. 32,33 The biaxial tensile strain in transferred Ge/Au/PET was evaluated to be 0.156% since its peak was only 0.65 cm −1 red-shifted from that of the Ge reference. The observed relaxation of 0.2% tensile strain should be ascribed to the undercut process, which led to the complete removal of the stress from the sacrificial layer.…”

Section: ■ Introductionmentioning

confidence: 99%

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High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration

Lee

et al. 2021

ACS Appl. Electron. Mater.

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We have demonstrated high-performance flexible germanium (Ge) vertical p−i−n photodetectors (PDs) based on a resonant cavity structure by a direct flip transfer of Ge nanomembranes on polyethylene terephthalate (PET) substrates. Finite-difference time-domain simulation proves that the vertical cavity structure composed of the bottom gold and top SU-8 layers as a reflector and an anti-reflection surface, respectively, could enhance the average absorption in the near-infrared (NIR) region (i.e., 1520−1640 nm) from 0.06 to 0.20 by 233%. Strains introduced into Ge NMs by convex and concave fixtures are measured to be 0.37 and −0.32%, respectively. The fabricated PDs exhibit a low dark current density of 9.6 mA/cm 2 at −1 V and a high forward−reverse current ratio of 10 5 under the flat condition. Responsivity at 1550 nm increases from 52.5 to 133.8 mA/W by tensile strain, while it slightly decreases to 32.6 mA/W under comparable compressive strain. Furthermore, the devices show no degradation in their optoelectronic responses after 200 bending cycles at convex fixtures with a radius of 30 mm. Overall, such flexible Ge PDs with the capabilities of both excellent optoelectronic performance and mechanical durability represent significant advances in the field of group IV NIR optoelectronic devices.

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Section: Methodsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration

Lee

et al. 2021

ACS Appl. Electron. Mater.

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“…The integration of Ge in Si technology is of manifold interest (Paul, 2004;Lee et al, 2017); the main challenge in achieving good crystalline Ge layers grown on Si(001) substrates is to overcome the Stranski-Krastanov growth mode which results from the 4.18% lattice mismatch. The first few monolayers will grow pseudomorphically, but after exceeding a critical thickness of three monolayers the film will relax elastically by maximizing its surface, and thus islanding occurs (Eaglesham & Cerullo, 1990).…”

Section: Epitaxial Growth Of Ge/si(001)mentioning

confidence: 99%

Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system

2020

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The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2θ/φ scans along [100], [110] and [310] directions as well as azimuthal φ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations.

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“…Germanium has played a crucial role as a semimetal for its attributes to enable electronic-photonic integration with silicon [1]. Germanium is superior to silicon in several properties, including higher carrier mobility than Si, a smaller delta between the Γ point and the L/X point of 136 meV, and longer cut-off wavelength than Si (at 1.55 µm) [2,3]. Germanium thin films find applications in waveguides in integrated photonic circuits [4,5].…”

Section: Introductionmentioning

confidence: 99%

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

Vanjaria

Hariharan

Arjunan

et al. 2021

Electronic Materials

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Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

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Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Abstract: Abstract

Cited by 17 publications

References 110 publications

High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration

High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration

Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

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