2024
DOI: 10.29292/jics.v19i1.796
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Hetero-Structure Junctionless MOSFET with High-k Corner Spacer for High-Speed and Energy-Efficient Applications

Mainak Mukherjee,
Niloy Ghosh,
Papiya Debnath
et al.

Abstract: In this research work, Hetero-structure Junction-less MOSFET having a Silicon-Germanium source and high-k inner corner spacer is proposed and investigated. In this article, we have shown that the introduction of a high-k dielectric material in the inner corner spacer and a low-k dielectric material in the rest of the spacer in the optimally designed device leads to a substantial reduction in parasitic capacitances, resulting in higher operating speed. It was also shown that proper doping in the drain-source un… Show more

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