Heteroepitaxial Ferroelectric ZnSnO₃ Thin Film

Abstract

We investigated the ferroelectric characteristics of an epitaxial perovskite ZnSnO(3) thin film on a (111) SrRuO(3)/(111) SrTiO(3) substrate fabricated by pulsed laser deposition. We confirmed that the ZnSnO(3) thin film was epitaxially grown on the substrate, forming large terraces on the surface of the ZnSnO(3) thin film. The ZnSnO(3) thin film exhibited a high ferroelectric polarization of approximately 47 microC/cm(2), which was further supported by first-principles calculations.

First‐Principles Studies on Novel Polar Oxide ZnSnO3; Pressure‐Induced Phase Transition and Electric Properties

“…[43] The Born effective charge tensors and spontaneous polarization along the c-axis of the LN-type ZnSnO 3 were calculated using the Berry phase approach. [44,45] The calculated spontaneous polarization was 56.9 8C cm À2 , which shows good agreement with the experimental results obtained from a thin-film of ZnSnO 3 ($47 8C cm À2 ) and previous first-principles computations (60 8C cm À2 ) by Son et al [9] The results are also consistent with the point charge model calculation using experimental structural parameters [8] (59 8C cm…”

“…Later, Son et al succeeded in synthesizing a LN-type ZnSnO 3 thin film with a high ferroelectric polarization of $47 8C cm À2 by pulsed laser deposition (PLD). [9] Since thin film formation enables one to utilize the ferroelectric material in electric circuits, a LN-type ZnSnO 3 can potentially replace existing materials in electronic devices.…”

Electronic, magnetic and dielectric properties of multiferroic MnTiO3

“…16 The prediction is thereafter validated by the synthesis of the high-pressure form of LN-type FeTiO 3 which is ferroelectric at and below room temperature and weakly ferromagnetic below 120 K. 17 Lately, Inaguma et al 18 synthesized LN-type MnTiO 3 with space group R3c under high pressure and temperature. They investigated its properties and confirmed that this compound is also ferroelectric polar at room temperature and has weak ferromagnetism at 25 K. Recently, Shin et al 19 experimentally demonstrated a high ferroelectric polarization level of ;47 lC/cm 2 in the heteroepitaxial thin film of LN-type ZnSnO 3 following its synthesis using high-pressure method. 20 For MnTiO 3 , naturally, both a) ferroelectric polarization and magnetic polarization, i.e., multiferroic properties, is also expected to exist in its high quality thin film.…”

Transparent conducting properties of SrSnO3 and ZnSnO3

“…[6][7][8][9][10][11][12] The related compounds, CaSnO 3 and SrSnO 3 , occur in distorted orthorhombic perovskite structures, 26 while ZnSnO 3 occurs in a ferroelectric LiNbO 3 type structure. 13,[27][28][29][30] Amorphous zinc-tin-oxide amorphous films were already been successfully developed for transparent electronics ten years ago, 31 while mixed phase films with compositions near ZnSnO 3 are known to show good TCO properties. 32,33 Nonetheless, indium containing amorphous In-Ga-Zn-O (IGZO) films is dominant in technological applications of transparent amorphous oxide electronics due to their performance.…”