2008
DOI: 10.1002/sia.2814
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Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

Abstract: The heteroepitaxial growth of cubic silicon carbide (3C-SiC) on Si(001) at a substrate temperature of 800• C was investigated using atmospheric-pressure plasma excited by very-high-frequency (VHF) power. The carbonization process of the Si surface was first studied using plasma of He, H 2 and CH 4 mixtures to suppress the undesired influences of the large lattice mismatch between Si and 3C-SiC. A (001)-oriented 3C-SiC layer, with thickness of approximately 3 nm and a root mean square roughness of 0.23 nm, was … Show more

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