Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

Tanoto, H.; Yoon, Soon Fatt; Loke, Wan Khai; Chen, K. P.; Fitzgerald, Eugene A.; Dohrman, Carl L.; Narayanan, Badri

doi:10.1063/1.2921835

Cited by 12 publications

(9 citation statements)

References 14 publications

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“…The relaxation of tensile strain in GaN layer for sample C causes the shrinking the lattice constant, which shifts the PL peak position to higher energy [ 29 ]. The reduced tensile stress in sample C arises predominantly from the coalescence of large-sized grains due to the NH 3 growth interruption method [ 30 , 31 ].…”

Section: Resultsmentioning

confidence: 99%

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Kim

Lee

et al. 2021

Micromachines

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We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

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Section: Resultsmentioning

confidence: 99%

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Kim

Lee

et al. 2021

Micromachines

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“…But GaAs films grow on Si substrate for numerous investigation uses of thick Ge buffer layer. The XRD FWHM range of GaAs films on Ge/Si is 180-276 arcsec [19][20][21]. Thick Ge buffer layer can obtain high quality GaAs cells, but it reduces the optical loss of bottom Si cells seriously.…”

Section: Resultsmentioning

confidence: 99%

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Kuo

Hsieh

et al. 2016

International Journal of Photoenergy

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We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

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“…The use of microchannel lateral epitaxy (80,81) can produce higher-quality layers (82) but requires an additional well-controlled patterning of the substrate. Another promising approach is the use of a Ge layer on Si as a template for the growth of a GaAs buffer and device layers (83,84). The lattice mismatch between Ge and GaAs is only ∼0.28%, which warrants high-quality crystalline GaAs layers.…”

Section: Vlsmentioning

confidence: 99%

Heterogeneous Integration of Compound Semiconductors

Moutanabbir

Gösele

2010

Annu. Rev. Mater. Res.

143

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The ability to tailor compound semiconductors and to integrate them onto foreign substrates can lead to superior or novel functionalities with a potential impact on various areas in electronics, optoelectronics, spintronics, biosensing, and photovoltaics. This review provides a brief description of different approaches to achieve this heterogeneous integration, with an emphasis on the ion-cut process, also known commercially as the Smart-Cut TM process. This process combines semiconductor wafer bonding and undercutting using defect engineering by light ion implantation. Bulk-quality heterostructures frequently unattainable by direct epitaxial growth can be produced, provided that a list of technical criteria is fulfilled, thus offering an additional degree of freedom in the design and fabrication of heterogeneous and flexible devices. Ion cutting is a generic process that can be employed to split and transfer fine monocrystalline layers from various crystals. Materials and engineering issues as well as our current understanding of the underlying physics involved in its application to cleaving thin layers from freestanding GaN, InP, and GaAs wafers are presented.

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Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

Cited by 12 publications

References 14 publications

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Heterogeneous Integration of Compound Semiconductors

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