Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy

Xiang, Wenfeng; Lü, Huibin; Chen, Z.H.; Lu, Xiaogang; He, Meng; Tian, Huyong; Zhou, Yongqiang; Li, C.R.; Ma, Xiaoxia

doi:10.1016/j.jcrysgro.2004.07.057

Cited by 23 publications

(9 citation statements)

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“…LAO has a high dielectric constant (~25 [6]), a large band-gap (5.1 eV [7]) and has been grown as amorphous [8] and epitaxial layers [9] on Si. Compared to other possible highk perovskites that have been epitaxially grown on Si, like SrTiO 3 (STO) [10], LAO has an important advantage: its band-offset with Si is 1.8 eV [11], while that of STO is virtually zero [12], which disqualifies STO as a possible gate material and questions its potential for spininjection.…”

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confidence: 99%

Spin-dependent tunneling through high-k LaAlO3

Garcia

Bibès

Maurice

et al. 2005

Applied Physics Letters

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confidence: 99%

Spin-dependent tunneling through high-k LaAlO3

Garcia

Bibès

Maurice

et al. 2005

Applied Physics Letters

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“…9) [41,42]. Finally, LaAlO 3 can be grown indirectly on Si by first growing a buffer layer of SrO or SrTiO 3 on Si [43][44][45][46]. Unfortunately, at present there is no experimentally verified method for depositing LaAlO 3 epitaxially and directly on Si.…”

Section: La On Simentioning

confidence: 99%

“…Efforts to grow other epitaxial complex oxide/ silicon interfaces, in particular LaAlO 3 /Si, which is highly desirable because of its larger band gap and favorable band alignments (as per Sect. 2.5), have so far been unsuccessful without an intervening buffer layer between the silicon and the oxide [43][44][45][46]. An in-depth experimental review of progress in the growth of complex oxides on silicon can be found in Ref.…”

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confidence: 99%

Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights

2012

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Crystalline metal oxides display a large number of physical functionalities such as ferroelectricity, magnetism, superconductivity, and Mott transitions. High quality heterostructures involving metal oxides and workhorse semiconductors such as silicon have the potential to open new directions in electronic device design that harness these degrees of freedom for computation or information storage. This review describes how first-principles theoretical modeling has informed current understanding of the growth mechanisms and resulting interfacial structures of crystalline, coherent, and epitaxial metal oxide thin films on semiconductors. Two overarching themes in this general area are addressed. First, the initial steps of oxide growth involve careful preparation of the semiconductor surface to guard against amorphous oxide formation and to create an ordered template for epitaxy. The methods by which this is achieved are reviewed, and possibilities for improving present processes to enable the epitaxial growth of a wider set of oxides are discussed. Second, once a heterointerface is created, the precise interfacial chemical composition and atomic structure is difficult to determine unambiguously from experiment or theory alone. The current understanding of the structure and properties of complex oxide/ semiconductor heterostructures is reviewed, and the main challenges to prediction-namely, (i) are these heterostructures in thermodynamic equilibrium or kinetically trapped, and (ii) how do the interfaces modify or couple to the degrees of freedom in the oxide?-are explored in detail for two metal oxide thin films on silicon. Finally, an outlook of where theoretical efforts in this field may be headed in the near future is provided.

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“…Epitaxial LAO films on STO-buffered Si(001) substrates have been grown by molecular beam epitaxy (MBE) at high temperature (> 600 °C). [10][11][12] However, the STO/Si interface is not stable above 600 °C, and oxygen present in the MBE-deposited STO can lead to the formation of an amorphous SiO x , or silicate layer at the STO/Si interface at high temperature. [11][12][13][14] Growth of oxide films by atomic layer deposition (ALD) may offer several advantages when compared to MBE and pulsed laser deposition, such as uniform deposition over large area substrates, good conformality and compatibility with current processing tools.…”

Section: Introductionmentioning

confidence: 99%

Growth of crystalline LaAlO₃by atomic layer deposition

et al. 2014

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Crystalline lanthanum aluminate (LAO) films were grown epitaxially on SrTiO 3 (001) and on Si(001) with a buffer layer of four unit cells of SrTiO 3 by atomic layer deposition. The SrTiO 3 buffer layer was grown by molecular beam epitaxy. Tris(N,N'-diisopropylformamidinate)-lanthanum, trimethylaluminum, and water as co-reactants were employed at 250 °C for atomic layer deposition. Films were characterized using ex-situ reflection high-energy electron diffraction, X-ray diffraction and in-situ X-ray photoelectron spectroscopy. The as-deposited LAO films were amorphous. Different annealing conditions were necessary to realize crystalline films because of different degrees of tensile strain between crystalline LAO and the SrTiO 3 or the Si(001) substrate. When grown on SrTiO 3 (001), with a lattice mismatch of 2.9%, annealing temperatures of 750 °C for 2 h were necessary. Crystalline films were realized at 600 °C under vacuum at 2 h for SrTiO 3 -buffered Si(001), with a lattice mismatch of 1.3%. By keeping the annealing temperature relatively low (2 h at 600 °C under vacuum), the interfacial amorphous layer at the STO/Si interface was minimized to about one monolayer and an abrupt interface between SrTiO 3 and LAO was maintained.

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Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy

Cited by 23 publications

References 20 publications

Spin-dependent tunneling through high-k LaAlO3

Spin-dependent tunneling through high-k LaAlO3

Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights

Growth of crystalline LaAlO₃by atomic layer deposition

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Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy

Cited by 23 publications

References 20 publications

Spin-dependent tunneling through high-k LaAlO3

Spin-dependent tunneling through high-k LaAlO3

Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights

Growth of crystalline LaAlO3by atomic layer deposition

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Product

Resources

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Growth of crystalline LaAlO₃by atomic layer deposition