Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz

Tassev, V.; Vangala, Shivashankar; Peterson, Rita D.; Kimani, Martin M.; Snure, Michael; Stites, Ronald W.; Guha, Shekhar; Slagle, Jonathan E.; Ensley, Trenton R.; Syed, Akbar Ali; Markov, Ivan

doi:10.1364/ome.6.001724

Cited by 22 publications

(29 citation statements)

References 40 publications

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“…This was done by purposely restricting the incorporation of Si coming from the hot reactor quartz parts. Moreover, by this the transparency of the grown GaP in the entire IR region was improved making it closer to the IR transparency of the semi-insulating (SI) GaP (Figure 10b), where the "bleaching" effect is achieved by p-type doping [59]. …”

Section: Additional Absorption Bandmentioning

confidence: 92%

“…The samples are quarters of 2-inch wafers. The images are taken using stitching software at 2.5× magnification [59]. (Reproduced from [59] with the permission of OSA).…”

Section: Expensive But Low Quality Commercial Gapmentioning

confidence: 99%

“…At this point growth of GaP on GaAs at much larger lattice mismatch (Figure 13b) sounded like wasting money in a hopeless adventure. That is why we forgot our first timid attempt (for more details see Section 6.7.1) to grow OPGaP on the only available OPGaAs templates at that time and proceeded as the rest Figure 12. (a) Due to poor parallelism 2 two-inch bonded "on-axis" (100) GaP wafers indicate a large useless area of voids between the wafers; (b) Such a problem does not exist when 2 GaAs wafers are bonded [59]. (Reproduced from [59] with the permission of OSA).…”

Section: Alternative Substrate Materialsmentioning

confidence: 99%

“…The crystalline quality, expressed by the Full Width of Half Maximum (FWHM) of an omega-scan reflection signal was also comparable for both GaP/GaP and GaP/GaAs cases (Figure 14b), although the initial crystalline quality of the GaAs substrate (before growth) was higher (Figure 14b,c). [59]. (Reproduced from [59] with the permission of OSA); (c) Reflection curves of omega-scans of a GaP and a GaAs substrate before the HVPE growth.…”

Section: Alternative Substrate Materialsmentioning

confidence: 99%

“…[59]. (Reproduced from [59] with the permission of OSA); (c) Reflection curves of omega-scans of a GaP and a GaAs substrate before the HVPE growth.…”

Section: Alternative Substrate Materialsmentioning

confidence: 99%

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Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Tassev

2017

Crystals

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Advances in Electronics and Optics are often preceded by discoveries in Crystal Growth theory and practice. This article represents in retrospect some of the most significant contributions of heteroepitaxy in these and some other areas-the strong impact of the three modes of heteroepitaxy on microelectronics and quantum optics, the big "push" of PENDEO epitaxy in development of Light Emitting Diodes, etc. A large part of the text is dedicated to heteroepitaxy of nonlinear optical materials grown on orientation-patterned templates and used in the development of new quasi-phase-matching frequency conversion laser sources. By achieving new frequency ranges such sources will result in a wide variety of applications in areas such as defense, security, industry, medicine, and science. Interesting facts from the scientific life of major contributors in the field are mixed in the text with fine details from growth experiments, chemical equations, results from material characterizations and some optical and crystallographic considerations-all these presented in a popular way but without neglecting their scientific importance and depth. The truth is that often heteroepitaxy is not just the better but the only available option. The truth is that delays in device development are usually due to gaps in materials research. In all this, miscommunication between different scientific communities always costs vain efforts, uncertainty, and years of going in a wrong scientific direction. With this article we aim to stimulate a constructive dialog that could lead to solutions of important interdisciplinary scientific and technical issues.

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Section: Additional Absorption Bandmentioning

confidence: 92%

“…The samples are quarters of 2-inch wafers. The images are taken using stitching software at 2.5× magnification [59]. (Reproduced from [59] with the permission of OSA).…”

Section: Expensive But Low Quality Commercial Gapmentioning

confidence: 99%

Section: Alternative Substrate Materialsmentioning

confidence: 99%

Section: Alternative Substrate Materialsmentioning

confidence: 99%

“…[59]. (Reproduced from [59] with the permission of OSA); (c) Reflection curves of omega-scans of a GaP and a GaAs substrate before the HVPE growth.…”

Section: Alternative Substrate Materialsmentioning

confidence: 99%

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Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Tassev

2017

Crystals

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Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Strömberg

Omanakuttan

et al. 2019

Physica Status Solidi (a)

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Heteroepitaxial growth of orientation-patterned (OP) GaP (OP-GaP) on wafer-bonded OP-GaAs templates is investigated by low-pressure hydride vapor phase epitaxy for exploiting the beneficial low two-photon absorption properties of GaP with the matured processing technologies and higher-quality substrates afforded by GaAs. -First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [110]-oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP-GaP on OP-GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP-GaP on OP-GaAs is studied. High OP-GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h À1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi-insulating GaAs is studied by terahertz time-domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP-GaP growth on OP-GaAs for frequency conversion by quasi-phase-matching in the mid-infrared and terahertz regions.

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Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Tassev

Vangala

Brinegar

et al. 2020

Physica Status Solidi (a)

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Thick hydride vapor phase heteroepitaxy of some III–V, II–VI, and III–VI binary and ternary semiconductor materials such as GaAs, GaP, GaP, GaAsxP1‐x, ZnSe, and GaSe is performed on GaAs substrates and orientation‐patterned GaAs templates. Up to 500 μm thick GaAs, GaP, GaP, GaAsxP1‐x, and ZnSe layers are deposited in single growths or after a regrowth. The GaSe layers deposited through van der Waals heteroepitaxy are up to 4–5 μm thick. When possible, growths are also performed homoepitaxially as the comparison of growth rate and layer quality indicates similar or better results in some of the heteroepitaxial cases. Material analysis using optical microscopy, scanning electron microscopy, atomic force microscopy, high‐resolution X‐ray diffraction, and energy dispersive X‐ray spectroscopy indicate smooth surface morphology, uniform layer thicknesses, high crystalline quality, and gradual substrate‐to‐layer material transition in the cases of heteroepitaxy. Respectively, the growths on the templates prepared by an optimized polarity inversion technique (assisted by molecular‐beam epitaxy) reveal excellent domain fidelity and good infrared transparency. The samples grown on templates are intended for frequency conversion devices operating in mid and longwave infrared. The layers grown on plain substrates are meant to support applications in optoelectronics, renewable energy, sensing, and solar cells.

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Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz

Cited by 22 publications

References 40 publications

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

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