Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction

Heteroepitaxial InSb films grown via Si(111)‐√7×√3‐In surface reconstruction

“…2. This pattern is very similar to those of the samples grown via √3×√3-In and 2×2-In surface reconstruction [8]. There are only three InSb peaks related with (111), (222) and (333) planes in this pattern, implying the epitaxial InSb.…”

“…There are only three InSb peaks related with (111), (222) and (333) planes in this pattern, implying the epitaxial InSb. The full width at half maximum (FWHM) of the InSb(111) peak is about 300 arcsec, which is narrower than reported before [8]. This result implies the reduction of InSb crystals grown on the 2×1-Sb, which has poor crystal quality.…”

“…In this work, we used the rectangular phase, because the √7×√3-In-hexagonal phase is usually the mixed surface with 2×2-In. Except for the initial In coverage, the growth condition of the samples is same as that in previous study [8]. The film thickness of the samples in this work is about 1.1 µm.…”

“…We have reported the heteroepitaxial growth of InSb films via In-Sb bi-layer (2×2-InSb) which was formed by adsorption of 1 monolayer (ML) Sb onto In-induced surface reconstructions such as √3×√3-In with 0.33-ML-In and 2×2-In with 0.75-ML-In [8]. In this case, the InSb films grown on the In-Sb bi-layer rotate by 30° with respect to Si substrate.…”

“…The preparation method of 2×2-In surface phase is described in Ref. [8]. There are two types of phases with the same √7×√3 periodicity, but different structures, namely, the hexagonal phase with 1.0-ML-In and the rectangular phase with 1.2-ML-In [10].…”