Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy
Gieop Lee,
An-Na Cha,
Sea Cho
et al.
Abstract:In this study, halide vapor phase epitaxy with flow modulation epitaxy (FME) was used to grow a 10 μm thick singlecrystalline α-Ga 2 O 3 epilayer on a sapphire substrate. By optimizing the interval time of the gas, highly crystalline thick α-Ga 2 O 3 epitaxial layers can be grown without any cracks. The as-grown α-Ga 2 O 3 was evaluated using scanning electron microscopy and atomic force microscopy to analyze the improvement in the surface morphology and roughness of the epitaxial layer, while X-ray diffractio… Show more
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