Heteroepitaxial La_2−xSr_xNiO₄-Nb-Doped SrTiO₃Junctions: Synthesis and Rectification Characteristics

Abstract

pn junctions formed with complex oxides may be of interest in emerging fields of electronics and energy conversion owing in part to their rich electronic structure. We report on the successful synthesis of epitaxial La 1.875 Sr 0.125 NiO 4 (LSNO) films on Nbdoped SrTiO 3 (Nb:STO) single crystals and a detailed study of their electrical properties. The junctions measured displayed highly rectifying current-voltage characteristic from 298 to 373 K. Mechanism for rectification is likely due to the formation of a pn junction between heavily doped n-type Nb:STO and semiconducting p-type LSNO. Capacitance-voltage (C-V) measurements as a function of temperature and frequency were used to determine the admittance of the pn junction. We investigate the thickness dependence of capacitance and highlight the role of defects in influencing the electronic properties of complex oxide pn junctions.

Improvement of electric insulation in dielectric layered perovskite nickelate films via fluorination

“…In addition, the holes in the y B 0. specimens was observed in giant dielectric constant materials with low resistivity such as A 2 NiO 4 and CaCu 3 TiO 4 . [41][42][43] As shown in Fig. 5(a), e r of the La 1.5 Sr 0.5 NiO x F y film decreased monotonically with increasing y.…”

Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

“…According to the Ellingham diagram, ZnO is less stable than CrO x and GeO x ; therefore, the oxygen in IGZO can react with the Cr and Ge in NCrGT, especially during the joule heating process of the set and reset operations, resulting in the formation of an interfacial reaction layer between IGZO and NCrGT. The interlayer may introduce more defects, suppressing an ideal carrier diffusion process at a pn diode junction 35,36 . In addition, the mobility and carrier density of IGZO might increase by thermally annealing it at more than 250 °C, due to the reduction of trap states by its random amorphous structure 37 .…”

Heteroepitaxy and crystallographic orientation transition in La1.875Sr0.125NiO4thin films on single crystal SrTiO3

“…34 In our previous study, epitaxial LSNO films were grown at lower oxygen partial pressures and faster deposition rates up to a thickness of 220 nm were (001) oriented. 21,35 Therefore, reorientation is not inherent in the growth of LSNO on tensile strained substrates.…”