Heteroepitaxial nucleation of diamond on nickel

Sitar, Zlatko; Liu, W.; Yang, P. C.; Wolden, Colin A.; Schlesser, R.; Prater, J. T.

doi:10.1016/s0925-9635(97)00244-6

Cited by 35 publications

(18 citation statements)

References 9 publications

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“…This technique was first demonstrated for the growth of diamond films in which the grains displayed an epitaxial growth relationship to the underlying nickel substrate. 14,15,16,17 In that research, the technique involved multistep seeding and thermal processing, whereby free carbon was first allowed to react with a nickel substrate to produce a thin molten phase at the surface. Once the reaction reached completion, the sample was then cooled to drive carbon reprecipitation.…”

Section: Introductionmentioning

confidence: 99%

The formation of epitaxial hexagonal boron nitride on nickel substrates

Yang

Prater²,

Liu

et al. 2005

Journal of Elec Materi

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The various crystallographic forms of boron nitride (BN) are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. Unfortunately, the synthesis of crystalline BN films is still in the early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many applications of interest, especially in electronics. The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique. Well-oriented hexagonal boron nitride (h-BN) crystals were obtained with highly faceted crystal shapes. The h-BN was formed via precipitation from a molten, hydrogen-saturated Ni surface layer. Solid cubic BN was utilized as the source material and was dissolved into the substrate surface during a brief high-temperature anneal. It was found that surface melting occurred during this process and the B diffused into the Ni substrate, whereas the N was expelled into the growth chamber. Oriented BN was then precipitated as the surface layer was allowed to resolidify.

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Section: Introductionmentioning

confidence: 99%

The formation of epitaxial hexagonal boron nitride on nickel substrates

Yang

Prater²,

Liu

et al. 2005

Journal of Elec Materi

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“…The considerable effort has been devoted to the synthesis of CVD diamond films on metal substrates at low temperatures and pressures. [1][2][3] Such films have great potential for applications in microelectronic devices, as tools, heat sinks, hard coatings, corrosion and wear resistant surfaces. CVD techniques for producing diamond films require a means of activating gas-phase carbon-containing precursor molecules.…”

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confidence: 99%

Increased Carbon Chemical Vapor Deposition and Carbon Nanotube Growth on Metal Substrates in Confined Spaces

Kukovitsky

L’vov

2012

ECS J. Solid State Sci. Technol.

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Experimental study of carbon deposition and carbon nanotube growth between stacked metallic substrates was conducted. The batch chemical vapor deposition (CVD) reactor was used with polyethylene as the carbon precursor. Increased carbon deposition was established on surfaces between stacked nickel substrates as compared to surfaces facing to open spaces. In general case carbon films deposited between substrates were not uniform giving rise to complicated profiles. The simple diffusion-reaction scheme gives carbon film thickness profiles closely resembling those experimentally observed. This similarity is considered as evidence of homogeneous-heterogeneous reaction sequences proceeding in narrow gap between catalytically active surfaces. Increased carbon nanotube growth was believed to occur as a result of the involvement of hydrocarbon radicals generated by the catalyst surface with subsequent release into the gas phase. Radicals accelerate gas-phase reactions providing reactive intermediates. Ultimately catalytic gas phase activation in the confined space promotes increased carbon formation. An explanation of the experimental results is proposed and a practical application was demonstrated.Carbon films and layers on supporting substrates are perspective components for an increasing number of potential applications. Chemical vapor deposition (CVD) is the preferred method to produce carbon films on substrates. For carbon materials obtained by CVD process carbon species and their properties are determined by the interacting influences of hydrodynamics and chemical kinetics, which in turn depend on the reactor type, process conditions (chemical precursor, temperature, temperature gradients, pressure), surface catalytic properties and may be affected also by extrinsic factors as gas or surface impurities, surface configuration and surface morphology. The vast majority of experimental works to produce carbon films or layers has been made using the crystalline silicon as a substrate. In particular, carbon nanotubes (CNT) are frequently being synthesized on silicon with coated catalyst (Ni, Fe, Co and alloys). This is commonly justified by the need for compatibility with technologies of modern microelectronics. There exist, however, many applications for which the use of metallic substrates is preferable to other materials or essential for device performance. The considerable effort has been devoted to the synthesis of CVD diamond films on metal substrates at low temperatures and pressures. 1-3 Such films have great potential for applications in microelectronic devices, as tools, heat sinks, hard coatings, corrosion and wear resistant surfaces. CVD techniques for producing diamond films require a means of activating gas-phase carbon-containing precursor molecules. Thermal or plasma activation procedures generate hydrogen and hydrocarbon radicals which participate in surface chemical reactions resulting in film growth. In fact, the same procedures are now widely used in nanotube CVD processes to low synthesis temperature...

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“…Grain boundaries could be avoided in single crystal heteroepitaxial films. Thus, strong efforts initiated during the last decade in the field of diamond heteroepitaxy focused on the selection of various substrates [1][2][3][4] and also on the search for appropriate nucleation [5][6][7] and optimized textured growth procedures. 8 However, up to now all reported heteroepitaxial films were polycrystalline.…”

mentioning

confidence: 99%

Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

Schreck

Hörmann

Röll

et al. 2001

Applied Physics Letters

111

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It is shown that diamond nucleation on iridium buffer layers followed by an appropriate textured-growth step offers a viable way to realize single-crystal diamond films. Bias-enhanced nucleation on iridium layers results in heteroepitaxial diamond films with highly improved alignment. By a subsequent textured-growth step, the mosaicity can be further reduced for tilt as well as for twist in sharp contrast to former experiments using silicon substrates. Minimum values of 0.17° and 0.38° have been measured for tilt and twist, respectively. Plan view transmission electron microscopy of these films shows that, for low thicknesses (0.6 μm and 8 μm), the films are polycrystalline, consisting of a closed network of grain boundaries. In contrast, at the highest thickness (34 μm) most of the remaining structural defects are concentrated in bands of limited extension. The absence of an interconnected network of grain boundaries shows that the latter films are no longer polycrystalline.

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Heteroepitaxial nucleation of diamond on nickel

Cited by 35 publications

References 9 publications

The formation of epitaxial hexagonal boron nitride on nickel substrates

The formation of epitaxial hexagonal boron nitride on nickel substrates

Increased Carbon Chemical Vapor Deposition and Carbon Nanotube Growth on Metal Substrates in Confined Spaces

Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

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