2009
DOI: 10.3938/jkps.54.858
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Heteroepitaxial Relation and Optical Properties of Cu-Doped ZnO Films Grown by Using Pulsed Laser Deposition

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Cited by 15 publications
(7 citation statements)
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“…Additionally, Cu in its Cu 2 þ ionic state (0.072 nm) has similar ionic radius compared to Zn 2 þ (0.074 nm) and the similarities in their electronic shell structure allows Cu 2 þ ions substitution easily into the ZnO host lattice. So far, numerous attempts have been performed to fabricate the Cu-doped ZnO films for specific applications in the field of optoelectronics through various deposition techniques, such as spray pyrolysis [9,12], RF sputtering [13][14][15][16], DC sputtering [17], simultaneous RF and DC magnetron sputtering [18], low-temperature aqueous solution route [19], pulsed laser deposition [20] and co-reactive magnetron sputtering [21]. However, among these, we focused on simultaneous RF and DC magnetron sputtering technique which enables here for better adhesion, tunable dopant concentration and controllability of structural and optical properties by independently doping of dopant element into host lattice.…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, Cu in its Cu 2 þ ionic state (0.072 nm) has similar ionic radius compared to Zn 2 þ (0.074 nm) and the similarities in their electronic shell structure allows Cu 2 þ ions substitution easily into the ZnO host lattice. So far, numerous attempts have been performed to fabricate the Cu-doped ZnO films for specific applications in the field of optoelectronics through various deposition techniques, such as spray pyrolysis [9,12], RF sputtering [13][14][15][16], DC sputtering [17], simultaneous RF and DC magnetron sputtering [18], low-temperature aqueous solution route [19], pulsed laser deposition [20] and co-reactive magnetron sputtering [21]. However, among these, we focused on simultaneous RF and DC magnetron sputtering technique which enables here for better adhesion, tunable dopant concentration and controllability of structural and optical properties by independently doping of dopant element into host lattice.…”
Section: Introductionmentioning
confidence: 99%
“…These drawbacks decrease the short circuit current and open circuit voltage in DSSCs and contribute significantly to the bottlenecking of the performance of the device. To address these lapses, many researchers tried to modify the ZnO nanostructures using different strategies including doping with 3d transition metals such as Mn, Co, Cr, Fe, Fr, Cu [21][22][23][24], or intra 4f transition rare earth (RE) metals such as La, Nd, Sm Ce, Er, Yb, Dy [25,26], as well as the coupled use of these metals. Recently, doping with RE gets paramount importance for the researchers because of their optical characteristics in the intra 4f transition [26].…”
Section: Introductionmentioning
confidence: 99%
“…Due to the similar ionic radius and electronic shell structure have many physical and chemical properties, which are equivalent to those of Zn [13]. Up to now, multiple solutions have been performed to fabricate the Cu-doped ZnO (CZO) films and explore their excellent applications in optoelectronics by a variety of deposition techniques [14,15], which include pulsed laser deposition, simultaneous radio frequency (RF) and direct current (DC) magnetron sputtering (MS) and so on. Recent papers have reported on microstructure and different properties of CZO materials, such as electrical, piezooptical effects, optical and photosensitivity properties et al Structural and optical properties of ZnO films with heavy Cu-doping prepared by MS which were reported by Y. Liu et al [16].…”
Section: Introduction mentioning
confidence: 99%