Heteroepitaxy and characterization of CuInSe2 on GaAs(001)

Niki, Shigeru; Makita, Yunosuke; Yamada, A.; Hellman, Olof C.; Fons, Paul; Obara, Akira; Okada, Yoshitaka; Shioda, R.; Ōyanagi, H.; Kurafuji, T.; Chichibu, S. F.; Nakanishi, H.

doi:10.1016/0022-0248(95)80129-z

Cited by 59 publications

(21 citation statements)

References 7 publications

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“…Numerous investigations on material grown under Cu-excess exist (for a recent review see [1]). On the other hand solar cell absorbers are made from Cu-poor material, which has been shown to be highly compensated [2][3][4][5]. Therefore more investigations to further the understanding of this highly compensated material are needed.…”

Section: Introductionmentioning

confidence: 97%

Photoluminescence excitation spectroscopy of highly compensated CuGaSe₂

Siebentritt

Papathanasiou

Lux‐Steiner

2005

Physica Status Solidi (b)

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The photoluminescence excitation spectra are presented of weakly and highly compensated CuGaSe 2 , grown under Cu-excess and under Cu-deficiency, respectively. An overlap is observed between the photoluminescence and the excitation spectrum in the Cu-poor material, indicating fluctuating potentials due to high compensation, whereas no overlap is observed in material grown under Cu-excess, indicating flat bands. The photoluminescence excitation spectra can be used as measure for the absorption spectrum in the case of flat bands, but not in the case fluctuating potentials, where different emission energies probe different depths of the fluctuations. Methods for the determination of the fluctuation amplitude from the photoluminescence and the excitation spectra are discussed.

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Section: Introductionmentioning

confidence: 97%

Photoluminescence excitation spectroscopy of highly compensated CuGaSe₂

Siebentritt

Papathanasiou

Lux‐Steiner

2005

Physica Status Solidi (b)

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“…Its high absorption coefficient, low toxicity, and electrical and optical properties make this compound a major candidate for the next generation of solar cells. Because of this high potential, researchers have developed a variety of techniques to deposit CIS thin films such as flash evaporation [1] [2], co-evaporation [3], sputtering [4] [5], molecular beam epitaxy [6], spray pyrolysis [7] [8], chemical vapour deposition [9] , etc.…”

Section: Introductionmentioning

confidence: 99%

Single step deposition method for nearly stoichiometric CuInSe2 thin films

et al. 2011

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This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As grown thin films consisted of pinhole free, densely packed grains. X ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material.No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe 2 . Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p type. The physical and structural properties of these films were analyzed using x-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques. KeywordsCuInSe 2 thin films, pulsed DC magnetron sputtering, stoichiometric CuInSe 2 films, photovoltaic, solar cells, single step CuInSe 2 films.

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“…Niki et al grew single-crystal CIS and CuGaSe 2 (CGS) layers on GaAs(001) substrates by MBE. [14][15][16][17] The CIS films were grown on a pseudo-lattice-matched InGaAs layer on GaAs(001) substrates. They concluded that a reduction in misfit strain made the growth of high-quality CIS epitaxial films possible.…”

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confidence: 99%

Single-crystal Cu(In,Ga)Se₂solar cells grown on GaAs substrates

Nishinaga

Nagai

Sugaya

et al. 2018

Appl. Phys. Express

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Single-crystal Cu(In,Ga)Se2 (CIGS) solar cells were produced with techniques developed for high-efficiency polycrystalline CIGS solar cells. The CIGS layers of a lattice match with GaAs were grown on GaAs(001) substrates by co-evaporation. The presence of a single-crystal CIGS layer without dislocations was confirmed by transmission electron microscopy. Alkaline metal incorporations were achieved by doping and postdeposition treatments. Ga grading structures were fabricated by two-layer deposition with different Ga contents. The Ga grading significantly increased the fill factor and open-circuit voltage. The best efficiency of 20% was achieved after heat–light soaking.

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Heteroepitaxy and characterization of CuInSe2 on GaAs(001)

Cited by 59 publications

References 7 publications

Photoluminescence excitation spectroscopy of highly compensated CuGaSe₂

Photoluminescence excitation spectroscopy of highly compensated CuGaSe₂

Single step deposition method for nearly stoichiometric CuInSe2 thin films

Single-crystal Cu(In,Ga)Se₂solar cells grown on GaAs substrates

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Heteroepitaxy and characterization of CuInSe2 on GaAs(001)

Cited by 59 publications

References 7 publications

Photoluminescence excitation spectroscopy of highly compensated CuGaSe2

Photoluminescence excitation spectroscopy of highly compensated CuGaSe2

Single step deposition method for nearly stoichiometric CuInSe2 thin films

Single-crystal Cu(In,Ga)Se2solar cells grown on GaAs substrates

Contact Info

Product

Resources

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Photoluminescence excitation spectroscopy of highly compensated CuGaSe₂

Photoluminescence excitation spectroscopy of highly compensated CuGaSe₂

Single-crystal Cu(In,Ga)Se₂solar cells grown on GaAs substrates