Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

Abstract

Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films on a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr 3 ) films on lattice-matched gallium arsenide (GaAs) substrates on a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid−gas reaction to form MAPbBr 3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr 3 /PbS/GaAs epistructure and confirm the monocrystalline nature of MAPbBr 3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.

Organic–inorganic hybrid perovskite materials and their application in transistors

“…97 The zinc blende GaAs has a lattice constant of 5.65 Å, which are also proper candidates for substrates. 98 Quasi-epitaxial growth is a more convenient approach to obtaining the crystalline film, which can be accomplished simply by spin-coating either perovskite or precursors solution on a proper single crystal substrate. 96,97…”

“…97 The zinc blende GaAs has a lattice constant of 5.65 Å, which are also proper candidates for substrates. 98 Quasi-epitaxial growth is a more convenient approach to obtaining the crystalline film, which can be accomplished simply by spin-coating either perovskite or precursors solution on a proper single crystal substrate. 96,97 Lei et al developed a novel lithography-assisted epitaxial growth, whereas a bulk crystal was applied as the substrate, and the patterned polymer was used as a growth mask.…”

Effects of A sTian, Chen, Bian et al. 2024J. Phys.: Condens. Matter0000View full textAdd to dashboardCite

“…In the field of crystal simulation growth, most of the researches have focused on the growth of thin films with heteroepitaxial GaAs [12][13][14][15][16][17][18], GaAs as substrates [19][20][21][22][23][24][25], and silicon carbide third-generation semiconductors [26][27][28][29]. However, heteroepitaxial growth encounters problems, such as lattice mismatch [30] and thermal adaptation, affecting the film growth, whereas homoepitaxial growth [31] can solve such problems.…”

Room Temperature Epitaxy of CH3NH3PbI3 Halide Perovskite by Pulsed Laser Deposition

“…Co-evaporation of epitaxial CsSnI3 and CsSnBr3 onto single-crystal alkalihalide salts, chemical vapor deposition of epitaxial CsPbBr3 nanoplate arrays on STO substrates or CH3NH3PbBr3 on PbS/GaAs substrates and chemical vapor transport of CsPbI3 nanoplates on muscovite mica, have been reported as well. 4,13,14,[19][20][21][22] . From this, only co-evaporation showed the formation of epitaxial films with thickness control, but no direct evidence, of improved optoelectronic performance, e.g.…”