Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature

Abstract

Amorphization of GaAs implanted with Cd in the dose range of 2 x 1013 -1.2 x 10 14 ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.

Damage Production in As Implanted GaAs1-xPx

“…There are several reports on the implanted binary crystals [1][2][3][4][5][6] but only very few papers have been devoted to the damage produced by ion implantation in ternary compounds [7][8][9][10][11]. In the case of device fabrication it is necessary to remove the post-implantation damage by some recrystallization process to achieve optimum operating characteristics of a device.…”