Heterogeneous integration by adhesive bonding

Esashi, Masayoshi; Tanaka, Shuji

doi:10.1186/2213-9621-1-3

Cited by 20 publications

(12 citation statements)

References 15 publications

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“…These advantages, together with the development of stable and CMOS-compatible waferlevel packaging solutions, enable flexible and cost-effective SoC solutions. Several products that are based on heterogeneous MEMS and IC integration approaches have already gained significant market shares on the extremely competitive highvolume consumer market 9,11,12 . Some of the factors contributing to this success are the compatibility of such approaches with fabless and fab-light business models, their ability to utilize standard CMOS-based ICs from various foundry sources and the potential they offer to dramatically shrink the overall MEMS device dimensions, thereby enabling the combination of multiple sensors on a single, highly integrated chip.…”

Section: Outlook and Conclusionmentioning

confidence: 99%

Integrating MEMS and ICs

et al. 2015

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The majority of microelectromechanical system (MEMS) devices must be combined with integrated circuits (ICs) for operation in larger electronic systems. While MEMS transducers sense or control physical, optical or chemical quantities, ICs typically provide functionalities related to the signals of these transducers, such as analog-to-digital conversion, amplification, filtering and information processing as well as communication between the MEMS transducer and the outside world. Thus, the vast majority of commercial MEMS products, such as accelerometers, gyroscopes and micro-mirror arrays, are integrated and packaged together with ICs. There are a variety of possible methods of integrating and packaging MEMS and IC components, and the technology of choice strongly depends on the device, the field of application and the commercial requirements. In this review paper, traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed. These include approaches based on the hybrid integration of multiple chips (multi-chip solutions) as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques. These are important technological building blocks for the 'More-ThanMoore' paradigm described in the International Technology Roadmap for Semiconductors. In this paper, the various approaches are categorized in a coherent manner, their merits are discussed, and suitable application areas and implementations are critically investigated. The implications of the different MEMS and IC integration approaches for packaging, testing and final system costs are reviewed.

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Section: Outlook and Conclusionmentioning

confidence: 99%

Integrating MEMS and ICs

et al. 2015

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“…MEMS as switches and filters fabricated on CMOS LSI are needed for future multi-band wireless systems, in which good mechanical properties or piezoelectric materials are required for the MEMS and state of the art for the LSI. Such hetero-integration can be performed by transferring MEMS devices or a film fabricated on a carrier wafer to a LSI wafer by adhesive bonding as shown in Fig.1 [1]. The LSI wafer is not damaged during the MEMS fabrication because the MEMS and the film are fabricated on a separated carrier wafer and the adhesive bonding can be carried out at low temperature.…”

Section: ⅰ Introductionmentioning

confidence: 99%

Micro systems for sustainable society

Esashi

2014

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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Wafer level adhesive bonding has been applied for the fabrication of micro systems which have heterogeneous components on LSI. Devices formed on a carrier wafer are transferred on a LSI wafer, which makes versatile heterogeneous integration possible. This has been applied to resonator, piezoelectric switch, tactile sensor, electron source and other value-added devices. Keywords-Micro system; MEMS; hetero-integration; adhesive bonding; wafer level packaging Ⅰ. INTRODUCTIONIntegrated MEMS (micro electro mechanical systems) as capacitive sensors and arrayed display have been produced successfully. MEMS as switches and filters fabricated on CMOS LSI are needed for future multi-band wireless systems, in which good mechanical properties or piezoelectric materials are required for the MEMS and state of the art for the LSI. Such hetero-integration can be performed by transferring MEMS devices or a film fabricated on a carrier wafer to a LSI wafer by adhesive bonding as shown in Fig.1 [1]. The LSI wafer is not damaged during the MEMS fabrication because the MEMS and the film are fabricated on a separated carrier wafer and the adhesive bonding can be carried out at low temperature. MEMS on LSI is encapsulated by WLP (wafer level packaging) [2] and finally diced to each chips. The wafer level batch transfer process can be low cost comparing chip level processes. For different chip size of MEMS from that of LSI selective transfer process described in Ⅱ is needed for cost-effective manufacturing. Figure 1. Concept of hetero-integration (MEMS on LSI) by adhesive bonding and wafer level packaging.Figure 2. Photograph of SAW resonators transferred to a LSI wafer. Ⅱ. HETERO-INTEGRATION BY SELECTIVE TRANSFERWafer level selective transfer from one carrier wafer to multiple target wafers are needed for cost-effective integration of different size chips. The selective transfer technology was applied to SAW (surface acoustic wave) resonators on LSI as in Fig.2 [3]. SAW resonators are fabricated on a LiNbO 3 wafer and the wafer is bonded to a glass carrier wafer using an adhesive and diced to make grooves. The flipped carrier wafer is bonded to the LSI wafer using bumps. Underfilling by polymer is carried out after debonding from the glass carrier wafer by laser.PZT (lead zirconate titanate)-actuated MEMS switches were fabricated on a LSI wafer as in Fig.3 [3]. The piezoelectric MEMS switch works at lower driving voltage and occupies smaller area than electrostatic MEMS switches. For the MEMS switch, the PZT was deposited on a Si wafer by a sol-gel method. Symmetrical structure made of two PZT layers is formed in order to prevent a bending. They are transferred to the LSI wafer using the adhesive bonding. After connecting the MEMS and the LSI using electroplated metal, the polymer was removed by O 2 plasma to release the MEMS switches. Figure 3. PZT MEMS switch on LSI

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“…Figure 1 c demonstrates that the wafer-level transfer of MEMS to LSI enables advanced heterogeneous integration of MEMS on LSI [ 1 ]. MEMS or film of functional materials as lead zirconate titanate (Pb(Zr,Ti)O 3 ) (PZT) are fabricated on a carrier wafer.…”

Section: Introductionmentioning

confidence: 99%

Stacked Integration of MEMS on LSI

Esashi

Tanaka

2016

Micromachines

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Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer methods are categorized to film transfer, device transfer connectivity last, and immediate connectivity at device transfer. Applications of these transfer methods are film bulk acoustic resonator (FBAR) on LSI, lead zirconate titanate (Pb(Zr,Ti)O3) (PZT) MEMS switch on LSI, and surface acoustic wave (SAW) resonators on LSI using respective methods. A selective transfer process was developed for multiple SAW filters on LSI. Tactile sensors and active matrix electron emitters for massive parallel electron beam lithography were developed using the through-Si vias.

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Heterogeneous integration by adhesive bonding

Cited by 20 publications

References 15 publications

Integrating MEMS and ICs

Integrating MEMS and ICs

Micro systems for sustainable society

Stacked Integration of MEMS on LSI

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