Heterogeneous integration technology for the thermal management of Ga₂O₃ power devices

Abstract

Heterogeneous integration technology for the thermal management of Ga 2 O 3 power devices[J].

Preface to Special Issue on Towards High Performance Ga2O3Electronics: Epitaxial Growth and Power Devices (Ⅰ)

“…Nickel oxide (NiO) has been identified as a promising wide-bandgap p-type semiconductor complementary to the n-type Ga 2 O 3 . X. Lu and co-work-ers [8] summarize and discuss recent advances and challenges of NiO/Ga 2 O 3 heterojunction enabled power electronic devices. Recent progress regarding the construction and characterization methods as well as the device technology for NiO/Ga 2 O 3 heterojunctions are critically surveyed.…”