New and Future Developments in Catalysis 2013
DOI: 10.1016/b978-0-444-53872-7.00001-7
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Heterogeneous Photocatalysis: Basic Approaches and Terminology

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Cited by 13 publications
(12 citation statements)
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“…Under correct electromagnetic irradiation (E hv ≥ Eg), the semiconductor absorbs this radiation and one electron can be excited from the doping donor level to cd of the semiconductor (equation (5)). In solution, the oxygen molecules adsorbed on the semiconductor surface prevent recombination by trapping electrons and this generates superoxide radical anions (equation (6)) [70,71]. Methylene blue photodegradation proceeds through both parallel and consecutive reactions, as superoxide radical anions can react directly with MB (equation (7)).…”
Section: Optical Studymentioning
confidence: 99%
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“…Under correct electromagnetic irradiation (E hv ≥ Eg), the semiconductor absorbs this radiation and one electron can be excited from the doping donor level to cd of the semiconductor (equation (5)). In solution, the oxygen molecules adsorbed on the semiconductor surface prevent recombination by trapping electrons and this generates superoxide radical anions (equation (6)) [70,71]. Methylene blue photodegradation proceeds through both parallel and consecutive reactions, as superoxide radical anions can react directly with MB (equation (7)).…”
Section: Optical Studymentioning
confidence: 99%
“…The fact that the KI scavenger decreases about 19% the photodegradation yield indicates that holes (h + ) can be produced in minor proportion after visible absorption, and the redox potential of holes is thermodynamically suitable to oxidize almost any organic molecule. Charge carrier trapping would suppress the recombination and increase the lifetime of the separated electron and hole; other factors such as surface area, crystallinity, and trap density can affect the photocatalytic performance of the semiconductor [70][71][72]:…”
Section: Optical Studymentioning
confidence: 99%
“…Generation and recombination of carriers determine the stationary concentration of photogenerated carriers in wide band gap solids (Figure ). Both electrons and holes produced on absorption of photons with energy greater than the band gap energy, E bg , in wide band gap solids initially transit into Franck–Condon states at energies higher than the bottom of the conduction and the top of the valence band, respectively (step 1 in Figure ). Thermal equilibrium between the crystalline semiconductor lattice and the photoproduced carriers is established as a result of relaxation of both energy and momentum of the charge carriers within a time scale of around 100 ps (i.e., 10 –10 s; steps 2 and 2′).…”
mentioning
confidence: 99%
“…where r 0 is the initial reaction rate, c 0 is the initial concentration, k is the reaction rate constant, and K is the apparent equilibrium constant [126].…”
Section: Initial Concentration Of the Reactantmentioning
confidence: 99%