Heterogeneous Silicon/III–V Semiconductor Optical Amplifiers

Davenport, Michael; Skendzic, Sandra; Volet, Nicolas; Hulme, Jared; Heck, Martijn J. R.; Bowers, John E.

doi:10.1109/jstqe.2016.2593103

Cited by 115 publications

(91 citation statements)

References 45 publications

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“…However, many advances that have been made on other platforms such as SOI and SiN can be transferred to LNOI waveguides. [70,71] One might even consider coupling with high efficiency first to a SiN waveguide, [69] which then couples adiabatically to a LNOI waveguide by using appropriate waveguide tapers. [25]…”

Section: Optical Interfacesmentioning

confidence: 99%

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Boes

Corcoran

Chang

et al. 2018

Laser & Photonics Reviews

577

290

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Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium niobate industry, enabling higher performance, lower cost and entirely new devices and applications. The availability of LNOI wafers has sparked significant interest in the platform for integrated optical applications, as LNOI offers the attractive material properties of lithium niobate, while also offering the stronger optical confinement and a high optical element integration density that has driven the success of more mature silicon and silicon nitride (SiN) photonics platforms. Due to some similarities between LNOI and SiN, established techniques and standards can readily be adapted to the LNOI platform including a significant array of interface approaches, device designs and also heterogeneous integration techniques for laser sources and photodetectors. In this contribution, we review the latest developments in this platform, examine where further development is necessary to achieve more functionalities in LNOI integrated optical circuits and make a few suggestions of interesting applications that could be realized in this platform.

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Section: Optical Interfacesmentioning

confidence: 99%

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Boes

Corcoran

Chang

et al. 2018

Laser & Photonics Reviews

577

290

View full text Add to dashboard Cite

show abstract

“…The last point is particularly important, because the ULL silicon platform uses the same silicon thickness (500 nm) as the heterogeneous silicon/III-V laser. The 500 nm thick silicon can achieve index matching between the silicon waveguide and the III-V epitaxial stack to provide a suitable Si/III-V hybrid mode in the gain section [34][35][36]. The use of a thick (500 nm) silicon layer has also been demonstrated to support high linearity heterogeneous silicon/III-V modulators [37] with high operating power [38], and high bandwidth photodetectors [9].…”

Section: Laser Design a Ultralow-loss Silicon Platformmentioning

confidence: 99%

High-power sub-kHz linewidth lasers fully integrated on silicon

Huang

Tran

Guo

et al. 2019

Optica

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163

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We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to reducing the laser linewidth while maintaining high output power and single-mode operation. The combination of narrow linewidth and high power enable its use in coherent communications, RF photonics, and optical sensing.

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“…Regarded as a promising platform, researchers in this field have ventured into the development of silicon photonic-based devices for high performance modulators, lasers and photodetectors. Besides the high-bandwidth photodiodes that have been demonstrated on silicon [78,79], heterogeneous integration of III-V on silicon provides an attractive way to achieve tunable lasers, broadband light sources [80], as well as optical amplifiers [81] to overcome system loss. The cross section of such directly bonded heterogenous integration incorporating a silicon waveguide with a III-V gain medium is used to demonstrate a hybrid silicon evanescent amplifier.…”

Section: Integrated Mwp For Inline Photonic Signal Processing and Fulmentioning

confidence: 99%

Integrated Microwave Photonics for Wideband Signal Processing

Chew

Song

et al. 2017

Photonics

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Abstract:We describe recent progress in integrated microwave photonics in wideband signal processing applications with a focus on the key signal processing building blocks, the realization of monolithic integration, and cascaded photonic signal processing for analog radio frequency (RF) photonic links. New developments in integration-based microwave photonic techniques, that have high potentialities to be used in a variety of sensing applications for enhanced resolution and speed are also presented.

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Heterogeneous Silicon/III–V Semiconductor Optical Amplifiers

Cited by 115 publications

References 45 publications

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

High-power sub-kHz linewidth lasers fully integrated on silicon

Integrated Microwave Photonics for Wideband Signal Processing

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