Heterojunction based on semiconductors with the chain structure TlSe-TlInSe2

Alekseev, I. V.

doi:10.1134/1.1187432

Cited by 11 publications

(5 citation statements)

References 5 publications

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“…The maximum peak of curves corresponds to the relaxation frequency such as: . The temperature dependence of , Fig.10, represented by the Arrhenius equation: (8) where ω o is the pre-exponential factor and ΔE p is the activation energy for the electrical relaxation processes. The value of ΔE p extracted from the slope of the plot in Fig.…”

Section: Frequency and Temperature Dependence Of Dielectric Constant mentioning

confidence: 99%

“…Due to the interesting properties, the low dimensional TlSe and TlInSe 2 single crystals have attracted the attention of researchers [5,[8][9][10][11][12][13]. TlInSe 2 crystal is reported to have different applications.…”

Section: Introductionmentioning

confidence: 99%

“…TlInSe 2 crystal is reported to have different applications. Tl-TlInSe 2 heterojunction sensitive to light and hard radiation was reported [8]. Semiconductor detector of neutron radiation, based on TlInSe 2 crystal, has been investigated [9].…”

Section: Introductionmentioning

confidence: 99%

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AC Conductivity and Dielectrical Properties of Bulk TlInSe2

2013

Egyptian Journal of Solids

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AC conductivity and dielectric properties of bulk TlInSe 2 were studied in the frequency and temperature range of 42-1 MHz and 294-473 K, respectively. The XRD pattern showed that the powder of TlInSe 2 has a tetragonal structure. AC conductivity, σ ac (ω), as a function of frequency varies as power law: σ ac (ω) = B ω s. Temperature dependence of frequency exponent was analyzed to predict the conduction mechanism, which was found to be correlated barrier hoping model (CBH). Frequency and temperature dependences of dielectric constant and dielectric loss were also investigated. Electric modulus formalism was applied for evaluating the activation energy of the dielectric relaxation process.

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Section: Frequency and Temperature Dependence Of Dielectric Constant mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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AC Conductivity and Dielectrical Properties of Bulk TlInSe2

2013

Egyptian Journal of Solids

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“…As for example, heterojunctions based on semiconductors with chain crystal structure TlSe–TlInSe 2 were produced. The heterojunction was reported to be sensitive to light and hard radiation 1. Recently, a new semiconductor detector of neutron radiation, based on TlInSe 2 crystal, has been investigated 2.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Ag/TlInSe₂/Ag structure

Qasrawi

Gasanly

2011

Physica Status Solidi (a)

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In this work, the current-voltage characteristics of Ag/TlInSe 2 / Ag and In/TlInSe 2 /In structures, the incident light intensity and time dependencies of photocurrent as well as the response timeillumination intensity dependence of Ag/TlInSe 2 /Ag structures have been studied. For bias voltages larger than 120.0 and 4.0 V, the current injection was found to be space-charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, respectively. While indium-contacted samples show S-shaped I-V dependence above bias voltage of 10.0 V, silver contacted samples does not show this behavior even at 200.0 V.For the Ag/TlInSe 2 /Ag structure, photocurrent was observed to exhibit stable values in a very short period of time. The device response time decreases with increasing illumination intensity, it exhibits a value of 0.13 s at incident light intensity of 53.6 mW cm À2 . The decrement in response time with increasing illumination intensity is associated with an increment in photocurrent at the same ratio. The ohmic behavior up to high voltages (120 V), the fast response time and the large spatial photocurrent make the Ag/TlInSe 2 /Ag structure promising IR detectors.

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“…As for example, a heterojunction based on semiconductors with a chain crystal structure TlSe-TlInSe 2 was produced. This heterojunction was reported to be sensitive to the light and hard radiation [2]. Recently, a new semiconductor detector of neutron radiation, based on a TlInSe 2 crystal, has been studied [3].…”

Section: Introductionmentioning

confidence: 99%

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Gasanly

Yıldırım

2011

Acta Phys. Pol. A

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Thermally stimulated current measurements were carried out on as-grown TlInSe 2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s −1 . The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10 13 and 3.4 × 10 12 cm −3 ) and capture cross section (4.1 × 10 −28 and 2.9 × 10 −26 cm 2 ) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

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Heterojunction based on semiconductors with the chain structure TlSe-TlInSe2

Cited by 11 publications

References 5 publications

AC Conductivity and Dielectrical Properties of Bulk TlInSe2

AC Conductivity and Dielectrical Properties of Bulk TlInSe2

Characterization of Ag/TlInSe₂/Ag structure

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

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Heterojunction based on semiconductors with the chain structure TlSe-TlInSe2

Cited by 11 publications

References 5 publications

AC Conductivity and Dielectrical Properties of Bulk TlInSe2

AC Conductivity and Dielectrical Properties of Bulk TlInSe2

Characterization of Ag/TlInSe2/Ag structure

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2Chain Crystals

Contact Info

Product

Resources

About

Characterization of Ag/TlInSe₂/Ag structure

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals