1997
DOI: 10.1143/jjap.36.6694
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Heterojunction Bipolar Transistor with an Additional Minority Carrier Reflection Barrier in the Emitter

Abstract: We report values for the single-photoionization cross sections to the 3 S and 3 P o channels and for the total double photoionization cross section, σ ++ (E), of the metastable He − 1s2s2p 4 P o state, obtained from the implementation of the state-specific, complex eigenvalue many-electron, many-photon theory (MEMPT). The σ ++ (E) rises from 0 at E = 0 to a maximum of about 1.0 × 10 −20 cm 2 at E ∼ 3-5 eV and dies out around 30 eV. For this quantity, comparison with the measurements of Bae et al for E = 0.0-0.… Show more

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