Heterojunction Photodetectors for Optical Communications

Campbell, Joe C.

doi:10.1016/b978-0-12-234124-3.50013-6

Cited by 5 publications

(1 citation statement)

References 59 publications

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“…H IGH GAIN, large bandwidth, and low-noise avalanche photodetectors (APD's) are increasingly attractive for use in high bit-rate optical communication systems because of the internal gain provided by APD's [1]- [3]. Silicon APD's are well known for their low excess noise and large gainbandwidth product due to the large asymmetry of electron and hole ionization coefficients [4].…”

Section: Introductionmentioning

confidence: 99%

Design of silicon hetero-interface photodetectors

Hawkins

Bowers

1997

J. Lightwave Technol.

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In a silicon hetero-interface photodetector, Si is used as the multiplication material to provide avalanche gain, while InGaAs is used as the absorption material. High quantum efficiency, high gain-bandwidth product, and low noise detection of wavelengths between 1.0 and 1.6 mm can be achieved in this way. We derive expressions for the frequency response for these detectors, present possible design variations, and analyze their performance. The effects of parasitics, transit time, and RC roll-off on frequency response are investigated and the 3-dB bandwidth and gain bandwidth product are calculated. Particular attention is paid to a 10 Gbit/s APD and we show that that a 3-dB bandwidth of 10 GHz and a gain-bandwidth product in excess of 400 GHz should be possible.

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Section: Introductionmentioning

confidence: 99%

Design of silicon hetero-interface photodetectors

Hawkins

Bowers

1997

J. Lightwave Technol.

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High Bandwidth Photodetectors

Sun

Bowers

1999

Springer Series in Photonics

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Frequency response of avalanche photodetectors with separate absorption and multiplication layers

Hawkins

Bowers

1996

J. Lightwave Technol.

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Absiruct-We present analytical expressions for the frequency response of avalanche photodetectors (APD's) with separate absorption and multiplication regions (SAM). The effect of the electric field profile in the multiplication layer on frequency response is considered for the first time. Previous theories have assumed that the multiplication layer is very thin and the peak electric field, which corresponds to the effective multiplication plane, is positioned away from the absorption layer. This is a poor assumption for many devices, and in particular for silicon hetero-interface photodetectors (SHIP'S). We present a theoretical model in which the thickness of the multiplication layer is arbitrary and the peak electric field may be positioned arbitrarily in relation to the absorption layer. We also consider the effects of parasitics, transit-time, and avalanche buildup time. Both front and back illumination from either multiplication layer or absorption layer are considered. The calculated results are compared with experimental results for existing SHIP's and performance predictions are also made for optimized SHIP structures. SHIP APD's with gain-bandwidth product in excess of 500 GHz are possible.

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Heterojunction Photodetectors for Optical Communications

Cited by 5 publications

References 59 publications

Design of silicon hetero-interface photodetectors

Design of silicon hetero-interface photodetectors

High Bandwidth Photodetectors

Frequency response of avalanche photodetectors with separate absorption and multiplication layers

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