2023
DOI: 10.21203/rs.3.rs-2444822/v1
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Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Abstract: The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effecti… Show more

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