Heterojunctions by alloying

Dale, J.R.; Josh, Matthew

doi:10.1016/0038-1101(65)90002-x

Cited by 11 publications

(4 citation statements)

References 12 publications

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“…Heteroj unctions prepared by recrystallization of (Galn)As layers from Bi/InAs/Mn alloy onto GaAs substrates (374) QOGaAs-OoGa-Jni-aAs heterojunctions prepared by liquidphase epitaxy (376) Heteroj unctions prepared by liquid-phase epitaxy …”

Section: Methods Used By Various Workers For Fabricating Abrupt-hetmentioning

confidence: 99%

Survey of Experimental Work on Heterojunctions

Sharma¹,

Purohit²

1974

Semiconductor Heterojunctions

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Section: Methods Used By Various Workers For Fabricating Abrupt-hetmentioning

confidence: 99%

Survey of Experimental Work on Heterojunctions

Sharma¹,

Purohit²

1974

Semiconductor Heterojunctions

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“…GaAs-GaSb,Asl -, , GaAs-Ga,Inl-,As, GaAs-Mn,As [38], GaAs-GaP [28], and Ge-Ge,Sil -, [88]. The vapour transport-interface alloying technique has at present only been successfully used t o make Ge-Si alloyed heterojunctions [39].…”

Section: Solution Growth Techniques Have Been Used To Grow Heterojuncmentioning

confidence: 99%

“…12a and b). Metallographic and microprobe anlaysis were also used by Daleand Josh [38] to establish the nature and composition of Mn&-GaAs heterojunctions and Mn&s-Ga,Inl -.As-GaAs structures grown from Bi-In As-Mn alloys. However, in the former case evidence suggests that this is not a true heterojunction since optical transmission experiments by Wright and Tansley [79] have shown that the energy-gap of bulk Mnds was substantially less than the value of 0.1 eV corresponding to the limit of detection of the experiment.…”

Section: The Solution Grown Heterojunctionmentioning

confidence: 99%

Alloyed Semiconductor Heterojunctions

Dale¹

1966

Physica Status Solidi (b)

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“…Thanks to the remarkable development of semiconductor technology, it has become possible to fabricate a wide variety of heterojunctions. [1][2][3][4][5][6][7] Since a lattice mismatch exists between the materials in most heterojunctions, defects such as dislocations are unavoidably present at the interface. Those kinds of lattice defects at the interface usually behave like deep states.…”

Section: Introductionmentioning

confidence: 99%

Conduction characteristics of n-InAs/n-GaAs heterojunctions with misfit dislocations

Kawazu¹,

Mano²,

Sakuma³

2023

Jpn. J. Appl. Phys.

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We investigated the transport properties of an n-InAs/n-GaAs heterojunction, where misfit dislocations are confined at the hetero-interface by forming a misfit dislocation network. The electric current I across the interface from n-InAs to n-GaAs was measured as a function of applied voltage V a. I is strongly suppressed at up to V a ∼ 1.0 V which is larger than the intrinsic conduction band offset between InAs and GaAs.I increases exponentially at low and high V a (=0.0–0.5 and 1.0–1.2 V), while the increase of I is relatively moderate at intermediate voltage V a (=0.5–1.0 V). We theoretically evaluated the I–V a characteristics of the n-InAs/n-GaAs heterojunction by using the thermionic-field emission model and examined the effects of the interface states due to the misfit dislocations. The comparison of the calculated results with the experimental data indicates the existence of acceptor-like interface states in the band gap of GaAs.

show abstract

Heterojunctions by alloying

Cited by 11 publications

References 12 publications

Survey of Experimental Work on Heterojunctions

Survey of Experimental Work on Heterojunctions

Alloyed Semiconductor Heterojunctions

Conduction characteristics of n-InAs/n-GaAs heterojunctions with misfit dislocations

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