2005
DOI: 10.1134/1.2150879
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Heteropolytype structures with SiC quantum dots

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Cited by 2 publications
(3 citation statements)
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“…In [131], 3C-SiC QDs grown by SEV on 3C-SiC substrates were studied. The crystal structure of the grown layers was studied by means of x-ray diffraction analysis (topography and diffractometry) and atomic force and transmission electron microscopies.…”
Section: Sic Quantum Dotsmentioning
confidence: 99%
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“…In [131], 3C-SiC QDs grown by SEV on 3C-SiC substrates were studied. The crystal structure of the grown layers was studied by means of x-ray diffraction analysis (topography and diffractometry) and atomic force and transmission electron microscopies.…”
Section: Sic Quantum Dotsmentioning
confidence: 99%
“…A comparison of the structural data obtained in [131] by different methods allowed the authors to conclude that an array of nanoislands was formed on the surface of an epitaxial layer of the 3C-SiC polytype and the structure of these nanoislands possibly coincided with that of the epitaxial layer. It may be assumed in this case that, after the 3C-SiC nanoislands were formed, they were overgrown with an epitaxial layer with a structure of the 6H-SiC or 3C-SiC polytype.…”
Section: Sic Quantum Dotsmentioning
confidence: 99%
“…This peak (as well as two other peaks in the blue part of the spectra: hν max ≈2.6 eV and hν max ≈2.72 eV) can be attributed to recombination in 6H-SiC. The A comparison of the structural data obtained in [13] by different methods allowed the authors to conclude that an array of nanoislands was formed on the surface of an epitaxial layer of the 3C-SiC polytype and the structure of these nanoislands possibly coincided with that of the epitaxial layer. It may be assumed in this case that, after the 3C-SiC nanoislands were formed, they were overgrown with an epitaxial layer with a structure of 6H-SiC or 3C-SiC polytype.…”
Section: Technologymentioning
confidence: 85%