Growth approaches
that limit the interface area between layers
to nanoscale regions are emerging as a promising pathway to limit
the interface defect formation due to mismatching lattice parameters
or thermal expansion coefficient. Interfacial defect mitigation is
of great interest in photovoltaics as it opens up more material combinations
for use in devices. Herein, an overview of the vapor–liquid–solid
and selective area epitaxy growth approaches applied to zinc phosphide
(Zn
3
P
2
), an earth-abundant absorber material,
is presented. First, we show how different morphologies, including
nanowires, nanopyramids, and thin films, can be achieved by tuning
the growth conditions and growth mechanisms. The growth conditions
are also shown to greatly impact the defect structure and composition
of the grown material, which can vary considerably from the ideal
stoichiometry (Zn
3
P
2
). Finally, the functional
properties are characterized. The direct band gap could accurately
be determined at 1.50 ± 0.1 eV, and through complementary density
functional theory calculations, we can identify a range of higher-order
band gap transitions observed through valence electron energy loss
spectroscopy and cathodoluminescence. Furthermore, we outline the
formation of rotated domains inside of the material, which are a potential
origin of defect transitions that have been long observed in zinc
phosphide but not yet explained. The basic understanding provided
reinvigorates the potential use of earth-abundant II–V semiconductors
in photovoltaic technology. Moreover, the transferrable nanoscale
growth approaches have the potential to be applied to other material
systems, as they mitigate the constraints of substrate–material
combinations causing interface defects.