Hexagonal Boron Nitride Encapsulation of Organic Microcrystals and Energy-Transfer Dynamics

Li, Wangxiang; Tian, Hao; Baren, Jeremiah van; Berges, Adam J.; Altaiary, Mashael M.; Liu, Erfu; Bekyarova, Elena; Lui, Chun Hung; Liu, Jianlin; Bardeen, Christopher J.

doi:10.1021/acs.jpcc.0c06346

Cited by 2 publications

(2 citation statements)

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“…[110,111] Subsequently, this technology was improved and employed to other 2D materials due to the continuous expansion of the 2D material system and the demand for materials growth. Li et al [112] spin-coated PMMA films with a thickness of about 200 nm on copper substrates on which graphene and h-BN were grown, respectively. Then, the metal was chemically etched with an aqueous solution of HCl (5 wt.% in water) and FeCl 3 (0.3 m), and then the 2D sample was rinsed with deionized water instead of the etchant, and repeated several times to finally complete the transfer.…”

Section: Wet Transfermentioning

confidence: 99%

“…Li et al. [ 112 ] spin‐coated PMMA films with a thickness of about 200 nm on copper substrates on which graphene and h‐BN were grown, respectively. Then, the metal was chemically etched with an aqueous solution of HCl (5 wt.% in water) and FeCl 3 (0.3 m ), and then the 2D sample was rinsed with deionized water instead of the etchant, and repeated several times to finally complete the transfer.…”

Section: Synthesis and Processing Of Flexible 2d Materialsmentioning

confidence: 99%

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Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Gong

et al. 2022

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properties and are proved to be potential in the fields of optoelectronics, photonics, biosensing as well as energy conversion and storage. Although centimeter-scale graphene single crystal has been obtained, it is not suitable for electronic switches in traditional transistors due to its semimetallic nature and large dark-current. Even many technologies have been proposed to create the energy bandgap in graphene, the value is remaining too small to realize practical applications. [2] Therefore, scientists are gradually changing the direction of research focusing on 2D materials beyond graphene, such as transition metal dichalcogenides (TMDs), graphitic carbon nitride, MXenes, hexagonal boron nitride (h-BN), hexagonal metal oxide (h-MO), and transition metal oxides (TMOs). As expected, 2D materials can provide a completely suspended surface without dangling bonds, so that the corresponding devices can minimize the influence of various surface states (Figure 1). [3] Benefitting from these excellent features, the 2D transistor can obtain a very low subthreshold swing (SS≈70 mV decade −1 ), which is comparable to the most advanced silicon (Si) transistor. [4] Due to excellent mechanical flexibility and compatibility with low-temperature manufacturing processes, 2D materials are expected to be used in flexible electronic products with plastic substrates. [5][6][7] The use of 2D materials in flexible electronic products can overcome several technical challenges in systems based on traditional materials, such as low mobility (typically below 10 cm 2 v −1 s −1 ), high driving voltage of organic materials, [8,9] complex technological processes, and large leakage current of polycrystalline Si. [10,11] Beyond their excellent electrical properties, 2D materials also exhibit a high degree of flexibility and transparency. Strong covalent bonds in the plane (Figure 1) make the 2D material mechanically robust, resulting in high fracture strains. [12][13][14] Mechanical robustness makes 2D materials suitable for flexible electronic products (Figure 2 reveals the roadmap of 2D materials used in flexible devices) that are subject to mechanical strain and cyclic stress. In addition, their atomic thickness makes them also suitable for transparent electronic products due to their high transparency in the visible range.In this paper, we first introduce the properties and preparation methods of 2D materials beyond graphene. Then, the applications of 2D materials in flexible devices are reviewed.2D materials are now at the forefront of state-of-the-art nanotechnologies due to their fascinating properties and unique structures. As expected, low-cost, high-volume, and high-quality 2D materials play an important role in the applications of flexible devices. Although considerable progress has been achieved in the integration of a series of novel 2D materials beyond graphene into flexible devices, a lot remains to be known. At this stage of their development, the key issues concern how to make further improvements to highperformance and scal...

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Section: Wet Transfermentioning

confidence: 99%

Section: Synthesis and Processing Of Flexible 2d Materialsmentioning

confidence: 99%

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Gong

et al. 2022

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Controllable Epitaxial Growth of Adlayer-Free Hexagonal Boron Nitride Monolayers on Silicon-Incorporated Ni(111) Substrates for Metal–Insulator–Metal Tunneling Devices

Li,

Mahmud,

Shou

et al. 2024

ACS Appl. Nano Mater.

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Atomically thin hexagonal boron nitride (h-BN) is heralded as the quintessential dielectric for two-dimensional (2D) material-based electronic devices owing to its exceptional properties. The controlled growth of high-uniformity and high-quality 2D h-BN single crystals stands pivotal for diverse applications. Substrate property is one of the crucial factors that influence the quality of epitaxial 2D h-BN films. In this work, we report the study of the molecular beam epitaxial growth of adlayer-free singlecrystal h-BN monolayers on Si-incorporated Ni (111) substrates. It was found that Si-incorporated Ni (111) substrates greatly enhanced the uniformity and quality of h-BN monolayer films by eliminating the formation of 3D adlayers during growth. The structural, optical, and electrical properties of these h-BN monolayers were comprehensively characterized. Metal−insulator−metal (MIM) tunneling devices and nanocapacitors were fabricated based on h-BN monolayers to validate their high performance. Our work provides a promising pathway toward the growth of high-quality 2D h-BN and beyond.

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Hexagonal Boron Nitride Encapsulation of Organic Microcrystals and Energy-Transfer Dynamics

Cited by 2 publications

References 46 publications

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Controllable Epitaxial Growth of Adlayer-Free Hexagonal Boron Nitride Monolayers on Silicon-Incorporated Ni(111) Substrates for Metal–Insulator–Metal Tunneling Devices

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