Hexagonal boron nitride (h-BN) irradiated with 140 MeV protons

Simos, N.; Kotsina, Z.; Sprouster, David; Zhong, Z.; Zhong, Hui; Hurh, P.

doi:10.1016/j.nimb.2020.06.018

Cited by 5 publications

(5 citation statements)

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“…The response of mono-layer h-BN on metal substrates to heavy-ion irradiation has been studied for a narrow range of ion energies (low-energy limit [26,27]), along with the ions in MeV range [28,29] or in high charge states [30], but the systematic experimental studies of the response of single and few-layer h-BN to ion irradiation are scarce, and the comprehensive picture of the behavior of this system under ion bombardment cannot be drawn based solely on the experimental data. We note that in a wider context, understanding the response of h-BN to irradiation is also important for the use of this material in various radiation-related applications, such as neutron and particle detectors and scintillators [9,28,31]. To this end, atomistic computer simulations have been demonstrated to be a useful tool to get microscopic insights into defect production and choose the range of parameters optimal for a specific task.…”

Section: Introductionmentioning

confidence: 99%

Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation

et al. 2021

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Controlled production of defects in hexagonal boron nitride (h-BN) through ion irradiation has recently been demonstrated to be an effective tool for adding new functionalities to this material, such as single-photon generation, and for developing optical quantum applications. Using analytical potential molecular dynamics, we study the mechanisms of vacancy creation in single- and multi-layer h-BN under low- and high-fluence ion irradiation. Our results quantify the densities of defects produced by noble gas ions in a wide range of ion energies and elucidate the types and distribution of defects in the target. The simulation data can directly be used to guide the experiment aimed at the creation of defects of particular types in h-BN targets for single-photon emission, spin-selective optical transitions and other applications by using beams of energetic ions.

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Section: Introductionmentioning

confidence: 99%

Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation

et al. 2021

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“…267 BN.-Hexagonal boron nitride (h-BN) irradiated with 140 MeV protons to a fluence of ∼6 10 20 p/cm 2 at ∼200 °C was found to resist damage from bombardment at the doses impinging normal to the crystallographic planes (or along the crystallographic c-axis). 268 High dose irradiation appeared to cause shifting of phase transitions over temperature regimes that h-BN → w-BN transitions occur. 269,270 Klein 271 reported the pressure phase transition from h-BN to wurtzitic BN was effected by ion irradiation.…”

Section: Defects Created By Proton Implantation Intomentioning

confidence: 98%

Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

Pearton

Aitkaliyeva

Xian

et al. 2021

ECS J. Solid State Sci. Technol.

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The wide bandgap semiconductors SiC and GaN are already commercialized as power devices that are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify these wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. In space-simulated conditions, GaN and SiC transistors have shown failure susceptibility at ∼50% of their nominal rated voltage. Similarly, SiC transistors are susceptible to radiation damage-induced degradation or failure under heavy-ion single-event effects testing conditions, reducing their utility in the space galactic cosmic ray environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage. The ultra-wide bandgap semiconductors Ga2O3, diamond and BN are also being explored for their higher power and higher operating temperature capabilities in power electronics and for solar-blind UV detectors. Ga2O3 appears to be more resistant to displacement damage than GaN and SiC, as expected from a consideration of their average bond strengths. Diamond, a highly radiation-resistant material, is considered a nearly ideal material for radiation detection, particularly in high-energy physics applications. The response of diamond to radiation exposure depends strongly on the nature of the growth (natural vs chemical vapor deposition), but overall, diamond is radiation hard up to several MGy of photons and electrons, up to 1015 (neutrons and high energetic protons) cm−2 and >1015 pions cm−2. BN is also radiation-hard to high proton and neutron doses, but h-BN undergoes a transition from sp2 to sp3 hybridization as a consequence of the neutron induced damage with formation of c-BN. Much more basic research is needed on the response of both the wide and ultra-wide bandgap semiconductors to radiation, especially single event effects.

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“…Besides electrical gapless graphene, ion irradiation has also been widely applied for the defect engineering of other 2D materials such as semiconducting transition metal dichalcogenides (TMDCs), [105][106][107][108] insulating h-BN, [109][110][111] and conductive MXenes. 112 Two-dimensional TMDC materials, including MoS 2 , WS 2 , MoSe 2 , and WSe 2 , are emerging layered materials with special properties and numerous potential applications.…”

Section: Structural Defect Manipulationmentioning

confidence: 99%