Hexagonal GaN1−xPx growth by laser-assisted metalorganic chemical vapor deposition

Kikawa, Junjiroh; Yoshida, Seikoh; Itoh, Yoshiteru

doi:10.1016/s0022-0248(01)01047-8

Cited by 14 publications

(3 citation statements)

References 11 publications

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“…Understanding the photochemistry of gas-phase metal−organic compounds is fundamental to harnessing the full potential of laser-assisted metal−organic chemical-vapor deposition (L-MOCVD or LCVD), which can produce superior films, with finer grain boundaries and improved purity, as compared to traditional thermal activation techniques. − Another advantage of LCVD over traditional thermal techniques is the potential for deposition on a wider range of substrates, including materials with poor thermal conductivity, or materials which cannot withstand elevated temperatures . LCVD technology has broad practical applications, including direct-write technology; deposition of amorphous carbon (α-C) films; carbon nanotubes; , W, Mo, and V films; TiN films; TiO 2 films; W nanoparticles; N-rich GaN 1− x P x films and single quantum wells; , N-rich GaInNP multiple quantum well structures; and polycrystalline Si solar cell applications…”

Section: Introductionmentioning

confidence: 99%

“…[2][3][4][5] Another advantage of LCVD over traditional thermal techniques is the potential for deposition on a wider range of substrates, including materials with poor thermal conductivity, or materials which cannot withstand elevated temperatures. 6 LCVD technology has broad practical applications, including direct-write technology; 7 deposition of amorphous carbon (R-C) films; 8 carbon nanotubes; 9,10 W, Mo, and V films; 11 TiN films; 12 TiO 2 films; 6 W nanoparticles; 13 N-rich GaN 1-x P x films and single quantum wells; 14,15 N-rich GaInNP multiple quantum well structures; 16 and polycrystalline Si solar cell applications. 5 There is a great potential for the development of LCVD of lanthanide materials.…”

Section: Introductionmentioning

confidence: 99%

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Photodissociation and Photoionization Mechanisms in Lanthanide-based Fluorinated β-Diketonate Metal−Organic Chemical-Vapor Deposition Precursors

et al. 2009

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A detailed photodissociation mechanism for the fluorinated lanthanide (Ln) β-diketonate metal-organic chemical-vapor deposition (MOCVD) precursors Ln(fod) 3 , Ln(hfac) 3 , and Ln(hfac) 3 diglyme was elucidated using photoionization time-of-flight mass spectrometry. The collisionless environment of the molecular beam source revealed a series of unimolecular steps, starting with dissociation of an intact β-diketonate ligand. Dissociation steps for the second and third ligands are associated with the attachment of a fluoride to the metal ion, leading to one of three ultimate products: Ln, LnF, or LnF 2 . Except in the case of Pr, no LnO is observed. The pattern of ligand fragmentation strongly supports a mechanism for the fluoride-attachment step which is similar to one previously proposed for the thermally activated decomposition of Ce(hfac) 3 glyme. 1 The detailed mechanistic understanding of the step-by-step fluorination will provide a basis for new ligand design, which maintains the advantageous mass-transport properties of the fluorinated precursors while controlling LnF x formation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photodissociation and Photoionization Mechanisms in Lanthanide-based Fluorinated β-Diketonate Metal−Organic Chemical-Vapor Deposition Precursors

et al. 2009

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“…However, corresponding reports are few [2][3][4][5][6]. The reason seems that the growth over a wide range of V-group composition is extremely difficult because of a big miscibility gap.…”

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confidence: 99%

Characterization of the GaN‐rich side of GaNP grown by metal‐organic chemical vapor deposition

Tsuda¹,

Mouri²,

Araki³

et al. 2003

Physica Status Solidi (b)

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We have investigated the growth of the GaN-rich side of GaNP films by metalorganic chemical vapor deposition (MOCVD). The GaNP samples were mainly analysed by using X-ray diffraction (XRD) and Auger electron spectroscopy (AES). From the XRD measurement, we have found that the c-axial lattice constant and the a-axial lattice constant of our GaNP were smaller than those of GaN. Moreover, we have confirmed that these lattice constants decreased with increasing PH 3 flow rate. According to the AES analysis, the nitrogen concentration in GaNP hardly changed along with increasing the PH 3 flow rate, but the gallium concentration tended to decrease. This fact implies that a phosphorus atom would be replaced with not a nitrogen atom but a gallium atom on III-group site.

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Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition

Chen

Shen

et al. 2005

Appl. Phys. A

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Hexagonal GaN1−xPx growth by laser-assisted metalorganic chemical vapor deposition

Cited by 14 publications

References 11 publications

Photodissociation and Photoionization Mechanisms in Lanthanide-based Fluorinated β-Diketonate Metal−Organic Chemical-Vapor Deposition Precursors

Photodissociation and Photoionization Mechanisms in Lanthanide-based Fluorinated β-Diketonate Metal−Organic Chemical-Vapor Deposition Precursors

Characterization of the GaN‐rich side of GaNP grown by metal‐organic chemical vapor deposition

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition

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