2010
DOI: 10.1103/physrevlett.105.076802
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Hexagonally Deformed Fermi Surface of the 3D Topological InsulatorBi2Se3

Abstract: A hexagonal deformation of the Fermi surface of Bi 2 Se 3 has been for the first time observed by angleresolved photoemission spectroscopy. This is in contrast to the general belief that Bi 2 Se 3 possesses an ideal Dirac cone. The hexagonal shape is found to disappear near the Dirac node, which would protect the surface state electrons from backscattering. It is also demonstrated that the Fermi energy of naturally electron-doped Bi 2 Se 3 can be tuned by 1% Mg doping in order to realize the quantum topologica… Show more

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Cited by 270 publications
(251 citation statements)
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“…34 Here it has to be mentioned that the size of the constant energy contour of GeBi 2 Te 4 (|k x | ∼ 0.1Å −1 at 150 meV above the Dirac point) is almost twice that of the ordered Bi 2 Se 3 (∼0.05Å −1 at the same energy). 10 This result implies that the intermixing of the GeBi 2 Te 4 crystal would broaden the momentum width of the TSS. To determine the k-space location of the bulk states with respect to the TSS, we have performed a detailed photon energy dependence study over a wide k range.…”
Section: Resultsmentioning
confidence: 95%
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“…34 Here it has to be mentioned that the size of the constant energy contour of GeBi 2 Te 4 (|k x | ∼ 0.1Å −1 at 150 meV above the Dirac point) is almost twice that of the ordered Bi 2 Se 3 (∼0.05Å −1 at the same energy). 10 This result implies that the intermixing of the GeBi 2 Te 4 crystal would broaden the momentum width of the TSS. To determine the k-space location of the bulk states with respect to the TSS, we have performed a detailed photon energy dependence study over a wide k range.…”
Section: Resultsmentioning
confidence: 95%
“…[15][16][17][18][19][20][21][22][23] Among these materials, Bi 2 Se 3 has been regarded as the most promising three-dimensional (3D) TI because it possesses a single TSS in a rather wide bulk energy gap. 9,10 However, no surface-isolated conduction has been observed for this binary compound even with the low carrier density realized by the hole doping. [24][25][26] One of the reasons for the dominant bulk conductance might be ascribed to its band structure, where the Dirac point of the topological surface state is located at or below the bulk valence-band maximum.…”
Section: Introductionmentioning
confidence: 99%
“…5 covers a bias range that is far from the Dirac point (E D is at V B = -0.4 V for V G = 0 V), and the constant energy contours of the surface states are hexagonally warped at these energies [35,36], which enhances the scattering.…”
Section: (B))mentioning
confidence: 99%
“…These prototypical compounds are characterized by a relatively wide bulk energy gap (∼0.3 eV for Bi 2 Se 3 and ∼0.15 eV for Bi 2 Te 3 ) and a single Dirac cone of the topological surface state at the¯ point. Typically, they are n-type compounds with the Dirac point located inside the bulk energy gap at energies of 0.1-0.4 eV below the Fermi level [1,[5][6][7]10]. Such features of the electronic structure are mainly determined by the Se vacancies in Bi 2 Se 3 and Bi-Te antisite defects in Bi 2 Te 3 [7,11].…”
Section: Introductionmentioning
confidence: 99%