HfAlO  high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

Mallik, S.; Mahata, Chandreswar; Hota, M. K.; Dalapati, Goutam Kumar; Z., D.; Sarkar, C. K.; Maiti, C. K.

doi:10.1016/j.mee.2010.02.009

Cited by 23 publications

(27 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(b). The main peak position at 1219.9 eV is in good agreement with the value of 1220.0 eV [20] and 1220.2-1220.6 eV [27] reported for GeO 2 . A subpeak with binding energy shift of 2.54 eV from Ge bulk was shown in Fig.…”

Section: Resultssupporting

confidence: 89%

“…For XPS spectra of Ge as shown in Fig. 2(a), in addition to a doublet of 3d 5/2 and 3d 3/2 from Ge bulk [19], [20], the spectra were deconvoluted into three subpeaks by using an XPS analysis software (Thermo Scientific Avantage). The 32.54 eV subpeak coincides with that of GeO 2 (32.3-33.6 eV) reported in [21]- [25], and the peak splitting of 3.24 eV with Ge bulk is in agreement with that of the formation of GeO 2 (3.2 eV) [26].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Jiang

Huang

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The interfacial and electrical properties of Ge-based metal-oxide-semiconductor (MOS) capacitor with high-k gate dielectric of HfTiO and passivation interlayer of LaTaON are investigated. Experimental results show the Ge MOS with HfTiO/LaTaON gate-stacked dielectric exhibits low interfacestate density (7.8 × 10 11 cm −2 eV −1 ), small gate-leakage current (7.88 × 10 −4 A cm −2 at V g − V fb = 1 V), small capacitance equivalent thickness (1.1 nm), and large equivalent dielectric constant (27.7). X-ray photoelectron spectroscopy and transmission electron microscopy reveal that the improvements should be due to the fact that La/Ta-based oxide/oxynitride has excellent interface properties with Ge, and the LaTaON interlayer can effectively block the in-diffusion of oxygen and the out-diffusion of germanium, thus suppressing the growth of low-k GeO x and intermixing between Ge and Hf.Index Terms-Ge metal-oxide-semiconductor (Ge MOS), high-k dielectric, interface properties, LaTaON, passivation layer.

show abstract

Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Jiang

Huang

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…In addition to a high dielectric constant, HfO 2 films have other advantages, such as a large band gap offset from that of Si and high thermal stability on silicon substrates [2][3][4][5]. Many methods for HfO 2 film deposition, such as sputtering, electron-beam evaporation, metal organic chemical vapor deposition, and atomic layer deposition (ALD), have recently been used [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of RF power of post-deposition oxygen treatment on HfO 2 gate dielectrics

Cheng

2014

Surface and Coatings Technology

View full text Add to dashboard Cite

“…In addition to a higher dielectric constant, HfO 2 films have other advantages with a large band gap, thermal stability, and stability on silicon substrates [2][3][4][5]. Many methods for HfO 2 film deposition, such as sputtering, electronbeam evaporation, metal organic chemical vapor deposition, and atomic layer deposition (ALD), have recently been used [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

RF Power Effect of Post-Deposition Oxygen Plasma Treatment on HfO₂ Gate Dielectrics

Cheng

2014

ECS Trans.

View full text Add to dashboard Cite

The radio frequency (RF) power effect of post-deposition O 2 plasma treatment on the physical, electrical, and reliability characteristics of high-k HfO 2 dielectric films was comprehensively investigated in this study. The experimental results indicated that increasing the RF power of post-deposition O 2 plasma treatment resulted in a stoichiometric HfO 2 film, but led to a thinner interfacial layer and the formation of new Hf-Si bonds. Additionally, the electrical characteristics and reliability performance of HfO 2 dielectric films were significantly impacted by the RF power of the post-deposition O 2 plasma treatment. As RF power is less than 30 W, the leakage current density and timeto-breakdown of the O 2 plasma-treated HfO 2 films were improved in comparison with those of the as-deposited samples. However, further increasing RF power exceeding 50 W would cause the continuous degradation in the electrical performance and reliability due to the plasma damage induced by oxygen active spices in a plasma environment. Therefore, performing a post-deposition O 2 plasma treatment process on the as-deposited HfO 2 dielectric films can effectively improve the dielectric's properties. However, the applied RF power is an essential controlling parameter, avoiding serious plasma damage occurrence.

show abstract

HfAlO high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

Cited by 23 publications

References 33 publications

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Effect of RF power of post-deposition oxygen treatment on HfO 2 gate dielectrics

RF Power Effect of Post-Deposition Oxygen Plasma Treatment on HfO₂ Gate Dielectrics

Contact Info

Product

Resources

About

HfAlO high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

Cited by 23 publications

References 33 publications

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Effect of RF power of post-deposition oxygen treatment on HfO 2 gate dielectrics

RF Power Effect of Post-Deposition Oxygen Plasma Treatment on HfO2 Gate Dielectrics

Contact Info

Product

Resources

About

RF Power Effect of Post-Deposition Oxygen Plasma Treatment on HfO₂ Gate Dielectrics