HFCVD diamond growth on Cu(111). Evidence for carbon phase transformations by in situ AES and XPS

Constant, L.; Speisser, C.; Normand, F. Le

doi:10.1016/s0039-6028(97)00203-3

Cited by 57 publications

(28 citation statements)

References 49 publications

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“…However, it is of note that an ion gauge was used for the pressure measurements in that study, which is known to result in the dissociation of hydrocarbon gas molecules in the mTorr pressure regime. In fact, decomposition of ethylene by a hot filament has been used to grow diamond films on copper substrates 21 .…”

Section: Introductionmentioning

confidence: 99%

Argon-assisted growth of epitaxial graphene on Cu(111)

et al. 2012

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The growth of graphene by catalytic decomposition of ethylene on Cu(111) in an ultra-high vacuum system was investigated with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. Attempts to form a graphene overlayer using ethylene at pressures as high as 10 mTorr and substrate temperatures as high as 900 • C resulted in almost no graphene growth. By using an argon overpressure, the growth of epitaxial graphene on Cu(111) was achieved.The suppression of graphene growth without the use of an argon overpressure is attributed to Cu sublimation at elevated temperatures. During the initial stages of growth, a random distribution of rounded graphene islands is observed. The predominant rotational orientation of the islands is within ±1 • of the Cu(111) substrate lattice.

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Section: Introductionmentioning

confidence: 99%

Argon-assisted growth of epitaxial graphene on Cu(111)

et al. 2012

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“…[22][23][24] Surface pretreatments such as carbon implantation and laserirradiation result in the formation of a graphite interlayer, preventing the epitaxial growth of diamond on Cu. 25,26 The diamond/Ti interface was found to be tough and adherent.…”

Section: Introductionmentioning

confidence: 99%

Adhesion at diamond/metal interfaces: A density functional theory study

Guo

2010

Journal of Applied Physics

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Experimental studies on relationships between the electron work function, adhesion, and friction for 3d transition metals J. Appl. Phys. 95, 7961 (2004) To understand the basic material properties required in selecting a metallic interlayer for enhanced adhesion of diamond coatings on the substrates, the interfaces between diamond and metals with different carbide formation enthalpies ͑Cu, Ti, and Al͒ are studied using density functional theory. It is found that the work of separation decreases, while the interface energy increases, with the carbide formation enthalpy ⌬H f ͑TiϽ AlϽ Cu͒. By comparing the work of separation at the interface with the work of decohesion of the metal, we found that the fracture is more likely to initiate in the metal phase near the interface; therefore a metal phase with a larger surface energy, ␥ s ͑TiϾ CuϾ Al͒, is needed to achieve a higher overall interface strength. In addition, when the surface energy is larger than the interface energy, a wetted diamond/metal interface is formed during diamond nucleation, providing the strongest adhesion compared to other growth modes. These results indicate that a strong carbide-forming ability and a large surface energy of the interlayer promote nucleation and enhance the adhesion and interface strength of the coating/substrate system.

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“…The substrate-surface temperature of the samples in this ). Therefore, a shorter distance between the filament and the substrate (46 mm) was investigated for (12) in Table 1 using a porcelain substrate. However, the BeCu alloy substrate melted at these distances.…”

Section: Resultsmentioning

confidence: 99%

“…higher electrical power (to activate of the gaseous source) 2. Cu-plate substrate holder for heat sink (to diffuse heat) 3. higher CH 4 concentration (2.5%) (to enhance the nucleation density) The synthesis processes were performed under the conditions for (12) in Table 1 using a Cu substrate. SEM images of the samples are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of diamond film and UNCD on BeCu substrate by hot filament CVD

Tsubota

Amano

Kojo

et al. 2013

J. Ceram. Soc. Japan

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Diamond film and ultrananocrystalline diamond (UNCD) film were synthesized on BeCu alloy substrate by using hot filament CVD apparatus. We succeed in the synthesis of diamond film and Boron-doped electrically conductive diamond film on the substrate. Moreover, UNCD film was successfully synthesized by the CVD apparatus, although this film was not electrically conductive electrically conductive. At the first stage of the CVD process for UNCD, needle-shape deposits appeared. A two-step process, that is, the synthesis of UNCD and then boron-doped diamond, was effective for the synthesis of the electrically conductive diamond film having smooth surface.

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HFCVD diamond growth on Cu(111). Evidence for carbon phase transformations by in situ AES and XPS

Cited by 57 publications

References 49 publications

Argon-assisted growth of epitaxial graphene on Cu(111)

Argon-assisted growth of epitaxial graphene on Cu(111)

Adhesion at diamond/metal interfaces: A density functional theory study

Synthesis of diamond film and UNCD on BeCu substrate by hot filament CVD

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