HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Zinc vacancy modulated quaternary metallic oxynitride GeZn1.7ON1.8: as a high-performance anode for lithium-ion storage

“…3d, the high-resolution XPS spectra of Ge 3d show the Ge-O and Ge-O-N bonds at 32.8 and 32.2 eV, respectively. 38,39 The above-mentioned characterizations demonstrate that the GeZn 1.7Àx ON 1.8 particles were successfully synthesized.…”

Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers

“…By far, a larger number of surface treatments have been investigated to hinder the production of surface oxides on a substrate prior to gate dielectric deposition, including chemical treatment and passivation processing, such as bromination, nitridation, and S or Si passivation. − In addition, some reports have confirmed that ALD-driven trimethylaluminum (TMA) with a self-cleaning effect can not only effectively etch the native oxides attached to Ge substrate but also improve the permittivity and suppress the gate leakage current. , However, simultaneous use of S passivation and TMA treatment has not been investigated systematically. In this work, prior to high- k gate dielectric deposition, S passivation and TMA processing were performed on Ge by exposure to the 20% (NH 4 ) 2 S aqueous solution and TMA precursor, respectively.…”

Impact of nitrogen plasma passivation on the Al/n-Ge contact

“…In fact, the application of GeOxNy in metal/Ge contacts was rarely reported. The thin GeOxNy passivation layer has been reported to be formed by nitridation at 600 o C in NH3 ambient [16,17]. However, as the electrodes passivation layer, the device structure has been fully prepared, a high nitridation temperature may deteriorate device performance.…”