HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, Ming; Roh, Yonghan; Noguchi, Takashi; Xianyu, Wenxu; Jung, Jiyoung

doi:10.1016/j.tsf.2006.10.083

Cited by 6 publications

(6 citation statements)

References 11 publications

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“…At 800 °C the amorphous layer transformed to the crystalline one [4]. A gradual increase of the total thickness of HfO 2 /Hf-Si-O stack by several nanometres was found along with annealing temperature [2]. The increase of HfO 2 or interfacial layer thickness depending on annealing temperature was not observed in our experiment.…”

Section: Resultscontrasting

confidence: 55%

“…gate oxides in MOSFETs, more attractive than conventional very thin SiO 2 , due to their excellent electrical properties [1]. However, HfO 2 easily crystallizes at low temperature causing defect centers and an increase of the leakage current which deteriorates high-k gate oxides [1,2]. Since double-layered structures HfO 2 /Hf-Si-O consist of poly-crystalline HfO 2 and thermal stable amorphous Hf-Si-O (as a result of interfacial reaction between HfO 2 and Si) [2], the gate leakage current can be reduced due to decreasing of defect centers in direct contact with Si substrate [1].…”

Section: Introductionmentioning

confidence: 99%

“…However, HfO 2 easily crystallizes at low temperature causing defect centers and an increase of the leakage current which deteriorates high-k gate oxides [1,2]. Since double-layered structures HfO 2 /Hf-Si-O consist of poly-crystalline HfO 2 and thermal stable amorphous Hf-Si-O (as a result of interfacial reaction between HfO 2 and Si) [2], the gate leakage current can be reduced due to decreasing of defect centers in direct contact with Si substrate [1]. Such double-layered HfO 2 /Hf-Si-O gate oxide stack consisted of amorphous layer in contact with Si substrate demonstrates excellent interfacial properties, which effectively cause an increase of high-k effective dielectric constant of the stack [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…The quality of HfO 2 /Si interface, especially after thermal processes, has significant influence on the device performance [2]. Therefore, structural investigation is important for technology optimization of semiconductor devices with high-k dielectric materials.…”

Section: Introductionmentioning

confidence: 99%

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Study of Oxides Formed in HfO2/Si Structure for High-k Dielectric Applications

Łaszcz

Czerwiński

Ratajczak

et al. 2012

SSP

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Transmission electron microscopy (TEM) techniques were used for characterization of annealing (400, 600 and 800 °C) influence on the structural properties of the HfO2 film (45 nm thick) deposited on Si substrate. Such structures are considered as high-k dielectric materials for application in novel semiconductor devices. The studies showed that independently of the annealing temperature a very thin and flat amorphous layer is formed between HfO2 layer and Si substrate. This result was also found in the non-annealed sample. EDXS examination confirmed that the stoichiometry for the hafnium oxide layer in each sample corresponds to 1:2 for Hf:O (i.e. to HfO2). TEM images revealed differences in the microstructure of HfO2 layers in annealed samples, however the layers have similar thickness and interface roughness in all studied samples.

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Section: Resultscontrasting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study of Oxides Formed in HfO2/Si Structure for High-k Dielectric Applications

Łaszcz

Czerwiński

Ratajczak

et al. 2012

SSP

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“…The contribution is assigned to Hf silicate bonds (Hf-O-Si), which are expected at a higher binding energy relative to HfO 2 . [9,10]…”

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confidence: 99%

Electrical, Structural and Interfacial Characterization of HfO ₂ Films on Si Substrates

Tan¹,

Liu²,

Li³

2011

Chinese Phys. Lett.

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Hafnium oxide films are deposited on Si (100) substrates by means of rf magnetron sputtering. The interfacial structure is studied using high-resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS), and the electrical properties of the Au/ HfO2/Si stack are analyzed by frequency-dependent capacitance-voltage (𝐶-𝑉 -𝑓 ) measurements. The amorphous interfacial layer between HfO2 and the Si substrate is observed by the HRTEM method. From the results of XPS, the interfacial layer comprises hafnium silicate and silicon oxide. For 𝐶-𝑉 -𝑓 measurements, the 𝐶-𝑉 plots show a peak at a low frequency and the change in frequency has effects on the intensity of the peak. As expected, rapid thermal annealing can passivate the interface states of the HfO2/Si stack.

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Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone

et al. 2008

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HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

Cited by 6 publications

References 11 publications

Study of Oxides Formed in HfO<sub>2</sub>/Si Structure for High-<i>k</i> Dielectric Applications

Study of Oxides Formed in HfO<sub>2</sub>/Si Structure for High-<i>k</i> Dielectric Applications

Electrical, Structural and Interfacial Characterization of HfO ₂ Films on Si Substrates

Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone

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HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

Cited by 6 publications

References 11 publications

Study of Oxides Formed in HfO<sub>2</sub>/Si Structure for High-<i>k</i> Dielectric Applications

Study of Oxides Formed in HfO<sub>2</sub>/Si Structure for High-<i>k</i> Dielectric Applications

Electrical, Structural and Interfacial Characterization of HfO 2 Films on Si Substrates

Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone

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Electrical, Structural and Interfacial Characterization of HfO ₂ Films on Si Substrates