HgCdTe APD- focal plane array development at CEA Leti-Minatec

Rothman, J.; Perrais, Gwladys; Borniol, Eric de; Castelein, Pierre; Baier, N.; Guellec, Fabrice; Tchagaspanian, Michael; Ballet, P.; Mollard, L.; Gout, S.; Perez, André; Fournier, Maryse; Chamonal, Jean-Paul; Tribolet, Philippe; Destéfanis, G.

doi:10.1117/12.780447

Cited by 12 publications

(7 citation statements)

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“…The dark currents measured at low reverse bias, I dark % 1 pA, are higher than expected, being higher than the typical values observed in standard MW p-i-n APDs with similar cutoff wavelengths, I eq_in % 100 fA 13 and higher than the experimental limits of our setup, given by photon leakage (I ph % 100 fA) and the shunt resistance of the setup R sh > 10 13 Ohms. The dark current at low bias is typically dominated by defect-related ShockleyRead-Hull (SRH) current or trap-assisted tunneling currents.…”

Section: Device Structure Growth and Technologycontrasting

confidence: 50%

“…The nominal composition of the collection layer was x Cd = 0.3, for which we have demonstrated high-performance avalanche gain in standard planar p-i-n devices. 9,12,13 The mercury vacancy doping, V Hg , was adjusted using vacuum thermal annealing to a nominal doping of N a = 3 9 10 16 cm À3 in the gain layer. The doping of the x Cd = 0.6 layers is expected to be lower.…”

Section: Device Structure Growth and Technologymentioning

confidence: 99%

“…12,13 The dark current levels obtained in MW APDs at T = 80 K, typically 100 fA, are low enough for most active imaging systems. For other applications, the dark current level needs to be reduced and/or the operating temperature needs to be increased.…”

Section: Introductionmentioning

confidence: 99%

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High-Operating-Temperature HgCdTe Avalanche Photodiodes

Rothman

Baier

Ballet

et al. 2009

Journal of Elec Materi

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In this communication we report the first results of electro-optical characterization of planar heterostructure HgCdTe avalanche photodiodes (APDs), which enables the operation of APDs at high gain, at low bias, and with low dark current and/or at high operating temperature (HOT). The APD is based on a heterostructure in which the photons are detected in a wide-bandgap layer, and the photoelectrons are amplified in a vertical junction in a confined narrow-gap layer. The dark diffusion current and thermal background sensitivity of the device are limited by using a thin narrow-band-gap amplification layer. In addition, the defect-limited dark current is also expected to be reduced due to the reduced volume of the narrow-band-gap depletion layer. The electro-optical performance was characterized at T = 80 K and T = 200 K for two devices with a nominal thickness of the amplification layer of w = 100 nm and 500 nm, realized in x Cd = 0.3 Hg-vacancy-doped layers grown by molecular-beam epitaxy (MBE). The measurements show an average gain of hMi = 10 at a reverse bias of 5 V, which is slightly reduced compared with a conventional APD with x Cd = 0.3. The thermal diffusion current measured at low reverse bias, V b = 0.1 V, and at T = 200 K is about 0.1 mA/cm 2 to 0.3 mA/cm 2 , which is a factor of 50 lower than standard x Cd = 0.3 n-on-p APDs. The quantum efficiency due to absorption in the gain layer is high (QE peak > 30%), although no antireflecting coating was used, indicating that the device can also be used for high-operating-temperature thermal detection.

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Section: Device Structure Growth and Technologycontrasting

confidence: 50%

Section: Device Structure Growth and Technologymentioning

confidence: 99%

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High-Operating-Temperature HgCdTe Avalanche Photodiodes

Rothman

Baier

Ballet

et al. 2009

Journal of Elec Materi

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“…Rothman et al [8,73] have reported back side illuminated p-i-n planar electron initiated MWIR HgCdTe APD with high avalanche gain of 5300, gain-bandwidth product GBW¼ 720 GHz, BW¼145 MHz, low noise factor F $ 1.0, shot noise equivalent input current I eq-in ¼2.0 Â 10 À 13 A to 1.0 Â 10 À 12 A under 12 V reverse bias. They found the bandwidth to be limited by the diffusion and lifetime of the minority carrier and weakly dependent on the gain.…”

Section: Recent Development In Apdmentioning

confidence: 98%

“…HgCdTe based APD arrays to detect low photon flux with a very short integration time are being developed for space and defence applications [72][73][74][75][76][77][78][79][80][81][82][83][84][85]. HgCdTe APDs are being fabricated in deferent types of architecture (Planar and HDVIP, etc.)…”

Section: Recent Development In Apdmentioning

confidence: 99%