HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

Smith, E. P.; Pham, L. T.; Venzor, G. M.; Norton, E. M.; Newton, Michael; Goetz, P. M.; Randall, Valerie; Gallagher, Andy; Pierce, Gregory; Patten, E. A.; Coussa, R. A.; Kosai, K.; Radford, W. A.; Giegerich, L. M.; Edwards, John; Johnson, S. M.; Baur, Stefan T.; Roth, J. A.; Nosho, B. Z.; Lyon, T. J. de; Jensen, J. Eric; Longshore, Randolph E.

doi:10.1007/s11664-004-0039-4

Cited by 68 publications

(21 citation statements)

References 19 publications

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“…A variation on the original back to back concept was implemented using HgCdTe at Rockwell [112] and Santa Barbara Research Center [113]. Following the successful demonstration of multispectral detectors in LPE-grown HgCdTe devices [113], the MBE and MOCVD techniques have been used for the grown of a variety of multispectral detectors at Raytheon [27,[114][115][116][117], BAE Systems [118], Leti [28,30,[119][120][121], Selex and QinetiQ [29,122,123], DRS, [26,124,125] Teledyne and NVESD [126,127]. For more than a decade a steady progression have been made in a wide variety of pixel size (to as small as 20 µm.…”

Section: Multicolour Detectorsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Section: Multicolour Detectorsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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“…[1][2][3][4] Several studies have also reported the effect that high-density ''dry'' electron cyclotron resonance (ECR) plasmas have on HgCdTe epitaxial properties. [5][6][7][8][9][10][11][12][13][14] However, ICP plasma processing, for use in HgCdTe, is still maturing and continued research is needed.…”

Section: Introductionmentioning

confidence: 99%

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Stoltz

Benson

Smith

2008

Journal of Elec Materi

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Inductively coupled plasma (ICP) processing has become the industrial processing standard for HgCdTe and its related II-VI compounds. In this study ICP processes were developed that allow several microns of HgCdTe to be plasma etched while maintaining a low root-mean-square (RMS) roughness, and even improving the surface roughness in the case of HgCdTe-on-Si. These ICP processes are superior to older electron cyclotron resonance (ECR) plasma etches. The resulting ICP plasma processed surfaces are oxygen and carbon free, have a good reflection high-energy electron diffraction (RHEED) pattern, and have only a small amount of mercury depletion, x = 0.22 to 0.47 (where x is the ratio of Cd to Hg), in the first 25 Å to 30 Å of the HgCdTe. Nanofeatures of the as-grown HgCdTe are retained during the process and are believed to be indicative of the fundamental defect mechanisms in the different HgCdTe etched surfaces. Results from these experiments strongly suggest that ICP plasma processes can be used to delineate pixels, etch vias, clean surfaces, and even produce epi-ready surfaces that would allow HgCdTe to become much more manufacturable, and perhaps allow the replacement of wet processing in HgCdTe.

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“…[1][2][3][4][5] The detection in two different bands or at two different wavelengths within the same band allows the absolute temperature determination of an infrared scene, assuming a constant emissivity over the spectral range. For different applications, several architectures of devices and spectral bands are involved:…”

Section: Introductionmentioning

confidence: 99%

Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI

Destéfanis

Baylet

Ballet

et al. 2007

Journal of Elec Materi

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In this paper we show the latest achievements of HgCdTe-based infrared bispectral focal plane arrays (FPAs) at LETI infrared laboratory. We present and compare the two different pixel architectures that are studied now in our laboratory, named ''NPN'' and ''pseudo-planar''. With these two technologies, a wide range of system applications in dual-band detection can be covered. Advantages of both architectures will be pointed out. We also review performances obtained with these different architectures. The first one has been studied for several years in our laboratory, and we review results obtained on FPAs of size 256 · 256 pixels on a 25 lm pitch, in the MWIR/MWIR (3 lm/5 lm) range. Very high noise equivalent temperature difference (NETD) operability is obtained, at 99.8% for the k c = 3 lm band and 98.7% for the k c = 5 lm band. The second one has been developed more recently, to address other applications that need temporal coherence as well as spatial coherence. We show detailed performances measured on pseudo-planar type FPAs of size 256 · 256 pixels on a 30 lm pitch, in the MWIR/LWIR (5 lm/9 lm) range. The results are also very promising for these prototypes, with NETD as low as 15 mK for an integration time as short as 1 ms, and good operability. The main manufacturing issues are also presented and discussed for both pixel architectures. Challenging process steps are, firstly, molecular beam epitaxy (MBE) HgCdTe heterostructure growth, on large substrates (cadmium zinc telluride) and heterosubstrates (germanium), and, secondly, detector array fabrication on a nonplanar surface. In particular, trenches or hole etching steps, photolithography and hybridization are crucial to improve uniformity, number of defects and performances. Some results of surface, structural and electrical characterizations are shown to illustrate these issues. On the basis of these results, the short-term and longterm objectives and trends for our research and development are presented, in terms of pixel pitch reduction, wavelengths, and dual-band FPA size.

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HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

Cited by 68 publications

References 19 publications

New material systems for third generation infrared photodetectors

New material systems for third generation infrared photodetectors

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI

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