HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors

Yakushev, M. V.; Varavin, V. S.; Vasilyev, Vladimir; Dvoretsky, S. A.; Sabinina, Yuri. Sidorov Irina; Sorochkin, A. V.; Aseev, A L

doi:10.5772/20587

Cited by 2 publications

(4 citation statements)

References 21 publications

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“…Moreover, the longwave shift of the "red" boundary with temperature decrease corresponds to temperature narrowing the MCT bandgap. The electron component of detector sensitivity reaches its maximum value for the time that corresponds well to the lifetime of photogenerated charge carriers in MCT crystal (∼10 at 300 K [2]), whereas the time scale of thermal effects is slower: their characteristic time constant is larger than 10 . In our experiments, the time for which the detector surface was exposed to photons was .…”

Section: Discussionmentioning

confidence: 99%

“…To decrease the influence of surface recombination, MCT layers were grown with x increasing in direction to the surface [2]. Close to the buffer layer, the Cd content also increases, and a potential barrier can be formed in some cases between the buffer and photosensitive layers.…”

Section: Mct-based Heterostructures Growthmentioning

confidence: 99%

“…The basic research is focused on the growth, doping and characterization of MCT on CdZnTe substrate with 4% zinc concentration for lattice matching, because the highest crystal perfection is realized only for this material compound [1]. The most attractive among alternative substrates, which have the advantages in comparison with CdZnTe substrates from the viewpoint of substrate dimensions and low cost, are those based on GaAs [2] and Si [2][3][4][5]. The disadvantage of these substrates is a large lattice mismatch of compound materials, which is equal to ~14.6% for CdTe/GaAs and ~19% for CdTe/Si at room temperatures (see Table 1).…”

Section: Introductionmentioning

confidence: 99%

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Narrow-gap piezoelectric heterostructure as IR detector

Sizov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3-5 μm) infrared spectral range without cryogenic cooling to achieve performance level D * =. The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties.

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Section: Discussionmentioning

confidence: 99%

Section: Mct-based Heterostructures Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Narrow-gap piezoelectric heterostructure as IR detector

Sizov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…The MCT-based heterostructure, shown in Fig. 1 [15]. To decrease the influence of surface recombination, MCT layers were grown with the Cd content increasing to the surface.…”

Section: Experimental: Mct-based Heterostructure Growth and Charactermentioning

confidence: 99%

Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction

Smirnov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were analyzed. It was determined that for [310] oriented MCT-based structures under the anisotropic restriction of the deformation the nonzero shear components of the strain tensor arise and stress induced piezoelectric polarization is generated. Existence of the built-in electric field in the strained MCT-based heterostructure results in the spatial separation of the nonequilibrium carriers and the possibility of the room temperature detection of the IR radiation is realized.

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HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors

Cited by 2 publications

References 21 publications

Narrow-gap piezoelectric heterostructure as IR detector

Narrow-gap piezoelectric heterostructure as IR detector

Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction

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