2019
DOI: 10.1021/acsenergylett.9b02486
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Hierarchal Nanorod-Derived Bilayer Strategy to Enhance the Photocurrent Density of Sb2Se3 Photocathodes for Photoelectrochemical Water Splitting

Abstract: For practical H 2 production via photoelectrochemical (PEC) water splitting, a proper nanostructure strategy allowing sufficient light absorption and effective charge carrier transport is of immense importance. In this study, via the unique sequential use of two different molecular inks, a bilayer nanostructure for a photocathode composed of vertically oriented nanorods Sb 2 Se 3 on top of a bottom compact Sb 2 Se 3 layer is produced. The hierarchical nanorod bilayer structure possesses light-trapping ability … Show more

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Cited by 73 publications
(53 citation statements)
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“…The open-circuit voltage ( V OC ) of the pristine film was found to be −0.13 V vs. SCE (0.49 V vs. RHE, Supplementary Equations (S1) and (S2) ), while the V OC values of treated Sb 2 Se 3 films shifted toward more positive potentials of about −0.05 V vs. SCE (0.57 V vs. RHE, Supplementary Equation (S3) ). For most Sb 2 Se 3 -based photoelectrodes, V OC values less than 0.5 V vs. RHE have been typically reported [ 20 , 21 , 22 , 23 ]. This V OC deficiency could be related to different material aspects such as (a) low quality of the single-phase Sb 2 Se 3 , a high concentration of defects and grain boundaries along with the presence of secondary crystalline or amorphous phases, which are harmful to the device performance [ 8 , 20 , 21 , 22 , 23 ]; (b) insufficient structure optimization, e.g., lattice mismatch, and an inauspicious band offset between p-type Sb 2 Se 3 and n-type CdS grown using a chemical bath [ 22 ].…”
Section: Resultsmentioning
confidence: 99%
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“…The open-circuit voltage ( V OC ) of the pristine film was found to be −0.13 V vs. SCE (0.49 V vs. RHE, Supplementary Equations (S1) and (S2) ), while the V OC values of treated Sb 2 Se 3 films shifted toward more positive potentials of about −0.05 V vs. SCE (0.57 V vs. RHE, Supplementary Equation (S3) ). For most Sb 2 Se 3 -based photoelectrodes, V OC values less than 0.5 V vs. RHE have been typically reported [ 20 , 21 , 22 , 23 ]. This V OC deficiency could be related to different material aspects such as (a) low quality of the single-phase Sb 2 Se 3 , a high concentration of defects and grain boundaries along with the presence of secondary crystalline or amorphous phases, which are harmful to the device performance [ 8 , 20 , 21 , 22 , 23 ]; (b) insufficient structure optimization, e.g., lattice mismatch, and an inauspicious band offset between p-type Sb 2 Se 3 and n-type CdS grown using a chemical bath [ 22 ].…”
Section: Resultsmentioning
confidence: 99%
“…For most Sb 2 Se 3 -based photoelectrodes, V OC values less than 0.5 V vs. RHE have been typically reported [ 20 , 21 , 22 , 23 ]. This V OC deficiency could be related to different material aspects such as (a) low quality of the single-phase Sb 2 Se 3 , a high concentration of defects and grain boundaries along with the presence of secondary crystalline or amorphous phases, which are harmful to the device performance [ 8 , 20 , 21 , 22 , 23 ]; (b) insufficient structure optimization, e.g., lattice mismatch, and an inauspicious band offset between p-type Sb 2 Se 3 and n-type CdS grown using a chemical bath [ 22 ]. Several authors reported the V OC values of about 0.6 V vs. RHE measured in Na 2 SO 4 electrolytes with pH values lying between 5 and 6.5 [ 39 , 40 ].…”
Section: Resultsmentioning
confidence: 99%
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“…Compared with semiconductor powder-based photocatalytic water splitting systems, photoelectrochemical (PEC) cells can effectively suppress the backward reactions, thus enabling us to collect hydrogen more easily [ 3 , 4 , 5 ]. The photocatalyst is at the core of PEC cells, and thus extensive efforts have been devoted to the development of abundant, inexpensive, nontoxic, and efficient photocatalysts [ 6 , 7 , 8 , 9 , 10 , 11 , 12 ]. Among those, colloidal semiconductor nanocrystals (NCs), with a physical size smaller than the exciton Bohr radius, offer some useful properties as compared with bulk semiconductors [ 13 , 14 , 15 , 16 , 17 ].…”
Section: Introductionmentioning
confidence: 99%