Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

Wu, Guangcheng; Xiang, Li; Wang, Wenqiang; Yao, Chengdong; Yan, Zeyi; Zhang, Cheng; Wu, Jiaxin; Liu, Yong; Zheng, Biyuan; Liu, Huawei; Hu, Chengwei; Sun, Xingxia; Zhu, Chenguang; Wang, Yizhe; Xiong, Xiong; Wu, Yanqing; Gao, Liang; Li, Dong; Pan, Anlian; Li, Shengman

doi:10.1016/j.scib.2023.12.027

Cited by 8 publications

(1 citation statement)

References 53 publications

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“…Oversampling leads to data redundancy, and undersampling leads to data loss. 11 There have been many reports on optoelectronic synapses achieving dynamic target detection, 12–14 but they did not further consider the application scenario of synapses. Under extreme conditions, the ability of optoelectronic synapses to process signals may not be sufficient to complete the task of detecting motion targets.…”

Section: Introductionmentioning

confidence: 99%

MXene-based optoelectronic synaptic transistors utilize attentional mechanisms to achieve hierarchical responses

Qin,

Ren,

Fan

et al. 2024

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

MXene-based optoelectronic synaptic transistors utilize attentional mechanisms to achieve hierarchical responses

Qin,

Ren,

Fan

et al. 2024

J. Mater. Chem. C

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Gate‐Switchable BST Ferroelectric MoS₂ FETs for Non‐Volatile Digital Memory and Analog Memristor

Tan,

Wu,

Zhao

et al. 2024

Adv Funct Materials

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To overcome the von Neumann bottleneck between memory and computing, the novel architectures with computing in‐memory are paid much attention and expected to be compatible with digital logic computing and/or analog brain‐inspired neuromorphic computing. Herein, by combining the Ba0.6Sr0.4TiO3 (BST) ferroelectric film and MoS2 layered semiconductor, a non‐volatile memory is constructed, which deliver the gate‐switchable function between the digital and analog functionality modes. The on/off ratio, subthreshold swing, and carrier mobility of MoS2/BST ferroelectric field‐effect transistor (FeFET) are 4.95×106, 68 mV dec−1, and 16.7 cm2 V−1 s−1, respectively. By a small electrical stimulation, the device demonstrates remarkable non‐volatile memory properties, including robust long‐term retention of ≈3000 s, superior endurance over 34 000 cycles, low operating energy at ≈0.3 pJ per spike. By a large electrical stress, it exhibits well memristive behavior and gating history dependent accumulation/diminution effect, which is attributed to the charge dynamic trapping/de‐trapping activation at the MoS2/BST interface. Following the historic memory behaviors, a cryptosystem is developed with auto‐generated reading log which is tamper‐resistant at hardware level. Moreover, the synaptic functions are realized on the device such as the short‐term potentiation/depression and gating‐depending synaptic plasticity. This study shows the opportunities of multi‐functionalities integration in a single FeFET device.

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Human Memory‐Inspired MoS₂/BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories

Tan,

Wu,

Lin

et al. 2024

Adv Funct Materials

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The collaborative working mode of different memory patterns–sensory, short‐term, and long‐term memories–in the human brain is significantly efficient and economical. This work reproduces the three memory patterns synchronously with the retention of 60 s, 30 min, and 18 h, respectively, on a Ba0.6Sr0.4TiO3 ferroelectric MoS2 phototransistor, showing the potential of vision perceptual‐like in‐memory sensing and computing ability. It also can be programmed to function as an optical multiply and accumulate (MAC) operator, in‐memory Boolean logic gates, and optical‐electrical cooperative synapses used for artificial neural network (ANN) pattern recognition. In addition, the current on/off ratio, subthreshold swing, and carrier mobility of the device is observed to reach 105, 72 mV dec−1 and 31 cm2 V−1 s−1, respectively. Also, its photodetection range can be extended from visible to near‐infrared by gate tuning. The responsivity and specific detectivity at 400 nm wavelength are 171452 A W−1 and 1.3 × 1014 Jones, respectively, while that at 1100 nm are 605 A W−1 and 3.2 × 1011 Jones, respectively. This work demonstrates that the ferroelectric phototransistor is capable of photodetection, parallel computing, and synaptic plasticity based on various memory patterns, so as to realize the real in‐memory sensing and computing functionality.

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Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

Cited by 8 publications

References 53 publications

MXene-based optoelectronic synaptic transistors utilize attentional mechanisms to achieve hierarchical responses

MXene-based optoelectronic synaptic transistors utilize attentional mechanisms to achieve hierarchical responses

Gate‐Switchable BST Ferroelectric MoS₂ FETs for Non‐Volatile Digital Memory and Analog Memristor

Human Memory‐Inspired MoS₂/BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories

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Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

Cited by 8 publications

References 53 publications

MXene-based optoelectronic synaptic transistors utilize attentional mechanisms to achieve hierarchical responses

MXene-based optoelectronic synaptic transistors utilize attentional mechanisms to achieve hierarchical responses

Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor

Human Memory‐Inspired MoS2/BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories

Contact Info

Product

Resources

About

Gate‐Switchable BST Ferroelectric MoS₂ FETs for Non‐Volatile Digital Memory and Analog Memristor

Human Memory‐Inspired MoS₂/BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories