Herein, the CuI/BaSnO3 quantum dot (QD)/ZnSnO3 perovskite-based transparent p–n junction was prepared
using
a hybrid approach involving sol–gel, freeze-drying, annealing,
and sputtering. The resulting CuI/BaSnO3 QD/ZnSnO3 p–n junction exhibited a transmittance of ∼85% and
a photovoltaic enhancement of ∼2.6 × 103 folds,
resulting in a photovoltaic conversion efficiency of ∼1.13%.
The p–n junction also demonstrated stable output over a 5-month
cycle. This remarkable performance can be mainly attributed to the
homologous perovskite BaSnO3 QD, which facilitated the
attainment of an appropriate Fermi level and high quantum yield, optimizing
carrier equilibrium while maintaining high transparency and providing
better lattice matching. Furthermore, the presence of additional hole-related
carriers caused by Cu vacancy allowed the effective utilization of
defects to optimize kinetic equilibrium. Additionally, the intrinsic
high physical and chemical stability of the inorganic perovskites
BaSnO3 QD and ZnSnO3 could improve intrinsic
stability.