High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Hibino, Daisuke; Shindo, Haruo; Abe, Yuichi; Hojyo, Yutaka; Fenger, Germain; Do, Thuy; Kusnadi, Ir; Sturtevant, John L.; Bisschop, Peter De; Kerkhove, Jeroen Van de

doi:10.1117/12.846025

Cited by 11 publications

(7 citation statements)

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“…Contour error is calculated by comparing SEM-contours and OPC model predicted contours as following Figure 3 [3]. Firstly, predicted contour is aligned to SEM-contour on Calibre ContourCal.…”

Section: Cds Contoursmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Main challenges are shown in Table 1 and reported [1][2][3][4][5]. Advanced SEM contouring technology which is combined with CD-gap-free contouring [4], Fine SEM Edge (FSE) technology [3], alignment and averaging method on arbitrary structures [3], and panoramic Mask SEM-contouring technology was developed. In SPIE advanced lithography 2011, an advanced hybrid OPC modeling which uses 1D CD measurements by CD-SEM and 2D contours created by the advanced SEM-contouring technology and panoramic Mask SEM-contour showed high predictability for both 1D and 2D, even though the relationship between 1D and 2D calibration has trade-off.…”

Section: Introductionmentioning

confidence: 99%

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Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

et al. 2012

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OPC modeling has been complex procedure in 28nm node, and it becomes difficult to obtain enough OPC modeling accuracy if calibration is done by using only CD value. Therefore it becomes essential to take pattern shape variation into consideration especially in 2D pattern calibration. Thus utilizing SEM-contour has become important technology. In SPIE advanced lithograpy 2010 [3], Contour-based OPC-modeling by using Advanced SEM-contour which is combined with Fine SEM Edge, alignment and averaging technologies was examined, and model quality was significantly improved. Also, in SPIE advanced lithography 2011, an advanced hybrid OPC modeling which uses 1D CD measurements by CD-SEM and 2D contours created by the advanced SEM-contouring technology and panoramic Mask SEM-contour showed high predictability for both 1D and 2D, even though the relationship between 1D and 2D calibration has trade-off. In this study, weighing function of Calibre ContourCal, a product of Mentor Graphics, was evaluated using the OPC data set same as that used in SPIE2011. The weighting can be set for 1D structure and 2D structure separately. In this paper, the quality of OPC model by applying different weighting is discussed.

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Section: Cds Contoursmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

et al. 2012

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“…First, the hot spot itself is a 2D feature in the case of complex mask layout. Second, 2D contour metrology improves accuracy and speed of OPC processing because a 2D feature contains more information than one-dimensional (1D) metric such as linewidth or hole diameter [4]. In addition to 2D contouring, spectral analysis including autocorrelation-length evaluation is an insightful method for resist-material development and process screening [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Robust edge detection with considering three-dimensional sidewall feature by CD-SEM

et al. 2011

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A method for achieving high repeatability in edge detection considering a three-dimensional (3D) feature of a pattern sidewall was developed. An edge-detection condition is regarded as the metric representing the z-coordinate (height) of the edge position. The dependences of line-edge or linewidth roughness (LER/LWR) and LER/LWR bias on the edgedetection condition were calculated. The calculated dependence is interpreted as the qualitative z-dependence of the roughness metrics. The 3D feature of the sidewall can therefore be roughly estimated from the dependence. The condition that minimizes the LER/LWR bias to achieve high repeatability for local measurements was determined. First, to check the validity of this method, the feasibility of 3D information extraction was examined. Unbiased LER and LER bias of resist and silicon pattern samples were plotted against the edge-detection condition, and it was found that the characteristics of the graphs of the unbiased LER and bias are related to the 3D feature observed by atomic force microscopy. Next, the robustness of the method against a change in the pattern shape caused by exposure defocus was demonstrated. Finally, it was shown that the method actually improves local measurement repeatability. In the case of the linewidth of a 9-nm-long line, repeatability was improved by 40% compared with that under the conventional edgedetection condition.

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“…Meanwhile, we must also consider the extent to which we can precisely measure fine structures with the available technology such as a scanning electron microscopy (SEM). Critical-dimension scanning electron microscopy (CD-SEM), which is specialized in measuring length and offers precision in the sub-nanometre scale, may be assumed 15 . For an artifact metrics to be made using silicon nanostructures fabricated based on conventional e-beam lithography, the defender, who wants to prevent counterfeiting, must fabricate fine-structured patterns such that the attacker, who wants to copy the authentic device, will not be able to intentionally reproduce the pattern based on the information obtained by CD-SEM.…”

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confidence: 99%

Nano-artifact metrics based on random collapse of resist

Matsumoto

Hoga

Ohyagi

et al. 2014

Sci Rep

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Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

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High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Cited by 11 publications

References 0 publications

Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

Robust edge detection with considering three-dimensional sidewall feature by CD-SEM

Nano-artifact metrics based on random collapse of resist

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