2006 International Symposium on VLSI Technology, Systems, and Applications 2006
DOI: 10.1109/vtsa.2006.251055
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High-&#x003BA; Hf-based charge trapping layer with Al<sub>2</sub>O<sub>3</sub> blocking oxide for high-density flash memory

S. Maikap
1
,
Pei-Jer Tzeng
2
,
L.S. Lee
3
et al.
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