2007
DOI: 10.1116/1.2756554
|View full text |Cite
|
Sign up to set email alerts
|

High aspect ratio Bosch etching of sub-0.25μm trenches for hyperintegration applications

Abstract: Articles you may be interested inNanofabrication of high aspect ratio (50:1) sub-10nm silicon nanowires using inductively coupled plasma etching J. Vac. Sci. Technol. B 30, 06FF02 (2012); 10.1116/1.4755835Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenchesThe ability to predict and optimize the effects of the process parameters during silicon dry etching is vital for the fabrication of emerging hyperintegration technologies… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
20
0

Year Published

2009
2009
2022
2022

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 32 publications
(25 citation statements)
references
References 13 publications
1
20
0
Order By: Relevance
“…In the present study, this problem has been resolved by using a plasma etcher, in which a Faraday cage was installed as an auxiliary device in the conventional gas chopping process (or the Bosch process). The conventional gas chopping process has been widely used in microelectromechanical systems (MEMS), providing high-AR Si etch profiles on a nanometer scale (23,24). However, this etching process is limited in controlling the angle of the etch profile as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In the present study, this problem has been resolved by using a plasma etcher, in which a Faraday cage was installed as an auxiliary device in the conventional gas chopping process (or the Bosch process). The conventional gas chopping process has been widely used in microelectromechanical systems (MEMS), providing high-AR Si etch profiles on a nanometer scale (23,24). However, this etching process is limited in controlling the angle of the etch profile as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The other was to use an etch-stop layer to improve the adhesive force of replicated structures. Because the gas chopping process makes the bottom etch profile round shaped (24,29) (Fig. 1D), the contact fraction of nanohairs replicated from the master was reduced at the time of contact (13).…”
Section: Resultsmentioning
confidence: 99%
“…The flow channel had an inlet at one side and a 50-µm-wide serpentine ending with an outlet at the other side. The silicon wafer was patterned using standard lithography techniques (Photoresists S1818, AZ4562 MicroChem) and etched using reactive ion etching in an ICP-RIE (Surface Technology Systems) using the Bosch process 32 for deep features (>5 µm). The compartment and flow channel were etched in two separate steps.…”
Section: Letters Nature Physics Doi: 101038/nphys3469mentioning
confidence: 99%
“…To enhance anisotropic etching, inductive coupled plasma reactive ion etching (ICP) and the Bosch process were developed. A number of groups have reported silicon deep structures with feature sizes ranging from 200 nm to microns that were realized using ICP and the Bosch process [3][4][5][6][7] . The disadvantage of this process, however, is that after etching, the sidewall roughness of the trench is unacceptable and its width is usually enlarged.…”
Section: Introductionmentioning
confidence: 99%