High aspect ratio through-silicon-via formation by using low-cost electroless-Ni as barrier and seed layers for 3D-LSI integration and packaging applications

Murugesan, M.; Mori, K.; Bea, J. C.; Koyanagi, Mitsumasa; Fukushima, Takafumi

doi:10.35848/1347-4065/ab75b8

Cited by 10 publications

(3 citation statements)

References 31 publications

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“…The TNT process does not involve any metallization process, and is capable of fabricating on 300 mm wafers, dramatically increasing the production volume compared to 100 mm wafers employed in academic settings. Furthermore, high aspect ratio etching technologies are well established and are employed in current productions, such as through-silicon-via (TSV) in 3D LSI integration and 3D capacitors in DRAM [ 82 , 83 ]. Therefore, TNT Si chips can be manufactured in semiconductor foundries using the standard semiconductor process, enabling high-volume mass production for potential future commercialization.…”

Section: Challenge and Future Prospectsmentioning

confidence: 99%

Tissue Nanotransfection Silicon Chip and Related Electroporation-Based Technologies for In Vivo Tissue Reprogramming

Xuan,

Wang,

Ghatak

et al. 2024

Nanomaterials

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Tissue nanotransfection (TNT), a cutting-edge technique of in vivo gene therapy, has gained substantial attention in various applications ranging from in vivo tissue reprogramming in regenerative medicine, and wound healing to cancer treatment. This technique harnesses the advancements in the semiconductor processes, facilitating the integration of conventional transdermal gene delivery methods—nanoelectroporation and microneedle technologies. TNT silicon chips have demonstrated considerable promise in reprogramming fibroblast cells of skin in vivo into vascular or neural cells in preclinical studies to assist in the recovery of injured limbs and damaged brain tissue. More recently, the application of TNT chips has been extended to the area of exosomes, which are vital for intracellular communication to track their functionality during the wound healing process. In this review, we provide an in-depth examination of the design, fabrication, and applications of TNT silicon chips, alongside a critical analysis of the electroporation-based gene transfer mechanisms. Additionally, the review discussed the existing limitations and challenges in the current technique, which may project future trajectories in the landscape of gene therapy. Through this exploration, the review aims to shed light on the prospects of TNT in the broader context of gene therapy and tissue regeneration.

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Section: Challenge and Future Prospectsmentioning

confidence: 99%

Tissue Nanotransfection Silicon Chip and Related Electroporation-Based Technologies for In Vivo Tissue Reprogramming

Xuan,

Wang,

Ghatak

et al. 2024

Nanomaterials

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“…To eliminate copper diffusion into silicon, a barrier layer of TiN, TiW, TaN, CoP, CoNiP or NiP is applied to the TSV walls [ 14 , 15 , 16 , 17 ]. Copper deposition in TSVs is undertaken by electroplating, which entails the deposition of a seed layer [ 18 ]. Usually, barrier and seed layers are deposited by sputtering; however, as the aspect ratio (AR) of TSV increases, this method does not achieve the desired results in the conformal coatings.…”

Section: Introductionmentioning

confidence: 99%

“…Copper deposition in TSVs is undertaken by electroplating, which entails the deposition of a seed layer [18]. Usually, barrier and seed layers are deposited by sputtering; however, as the aspect ratio (AR) of TSV increases, this method does not achieve the desired results in the conformal coatings.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications

Buylov,

Sotskaya,

Kozaderov

et al. 2023

Micromachines

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In our work, we studied thin nickel films deposited by electroless plating for use as a barrier and seed layer in the through-silicon vias (TSV) technology. El-Ni coatings were deposited on a copper substrate from the original electrolyte and with the use of various concentrations of organic additives in the composition of the electrolyte. The surface morphology, crystal state, and phase composition of the deposited coatings were studied by SEM, AFM, and XRD methods. The El-Ni coating deposited without the use of an organic additive has an irregular topography with rare phenocrysts of globular formations of hemispherical shape and a root mean square roughness value of 13.62 nm. The phosphorus concentration in the coating is 9.78 wt.%. According to the results of the X-ray diffraction studies of El-Ni, the coating deposited without the use of an organic additive has a nanocrystalline structure with an average nickel crystallite size of 2.76 nm. The influence of the organic additive is seen in the smoothening of the samples surface. The root mean square roughness values of the El-Ni sample coatings vary within 2.09–2.70 nm. According to microanalysis data the phosphorus concentration in the developed coatings is ~4.7–6.2 wt.%. The study of the crystalline state of the deposited coatings by X-ray diffraction made it possible to detect two arrays of nanocrystallites in their structure, with average sizes of 4.8–10.3 nm and 1.3–2.6 nm.

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An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Su,

Ding,

Xiao

et al. 2024

Microsyst Nanoeng

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Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

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High aspect ratio through-silicon-via formation by using low-cost electroless-Ni as barrier and seed layers for 3D-LSI integration and packaging applications

Cited by 10 publications

References 31 publications

Tissue Nanotransfection Silicon Chip and Related Electroporation-Based Technologies for In Vivo Tissue Reprogramming

Tissue Nanotransfection Silicon Chip and Related Electroporation-Based Technologies for In Vivo Tissue Reprogramming

Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

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