High aspect ratio via etching for dual damascene process in a inductively coupled plasma (ICP) etcher

Abstract

Deep-via etching for dual-damascene process adopting via-first scheme was studied in ICP etching system. The via etching in the structure compatible with 0.18 ,an design rule strongly requires the process specifications such as hgh aspect ratio IMD(inter-metal dielectric) etching consisting of intermediate nitride and oxide layers, highly selective etching to photoresist (PR) andto sub-underlying layer. In order to investigate the compromise between the main etch parameters. a