2011
DOI: 10.1002/pssc.201084008
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High bandgap dielectrics for antireflective coating in silicon solar cells by reactive ion sputtering

Abstract: High bandgap materials have recently attracted a lot of interest for their potential application in photovoltaics (PV). Aluminium nitride (AlNx) is a potential candidate for the passivation and antireflective coating on silicon solar cells. AlNx thin films have been deposited by a remote plasma deposition system HiTUS (High Target Utilisation Sputtering). The AlNx thin films were grown by reactive sputtering from an aluminium target in a N2 atmosphere, negating the use of silane gas commonly used in PECVD depo… Show more

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Cited by 4 publications
(5 citation statements)
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“…1 Ω cm FZ, p-type also consistent with the low level of passivation reported by Kaminski [10]. Increasing the hydrogen flow leads to an increase in lifetime accompanied by a decrease of the interface defect density.…”
Section: Fig 2 Influence Of the Hydrogen Flow During Sputter Depositi...supporting
confidence: 88%
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“…1 Ω cm FZ, p-type also consistent with the low level of passivation reported by Kaminski [10]. Increasing the hydrogen flow leads to an increase in lifetime accompanied by a decrease of the interface defect density.…”
Section: Fig 2 Influence Of the Hydrogen Flow During Sputter Depositi...supporting
confidence: 88%
“…Recent experiments for reactively sputtered aluminum nitride in silicon photovoltaics reached only a low level of passivation with lifetimes of 12 µs [10]. It has been shown for sputtered SiN x :H that the hydrogen concentration in the layer can significantly influence the obtainable solar cell efficiency [12,18].…”
Section: A Influence Of Hydrogen On the Passivation Of Aln:h Layersmentioning
confidence: 99%
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“…Previous attempts in the use of aluminum nitride for silicon solar cells resulted in good anti‐reflection coatings, but good surface passivation was not achieved 21. In the present contribution, we demonstrate that sputtered hydrogenated aluminum nitride can provide both excellent surface passivation and good anti‐reflection properties, making it a suitable alternative to the aluminum oxide and silicon nitride stack that is currently used in silicon solar cells.…”
Section: Introductionmentioning
confidence: 72%
“…Beside classical uniform single-layer ARCs, many structured or patterned films and surfaces have also been developed which exhibit very low reflection in a range of spectra. These designs include (but are not limited to) silica particles [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ] (see Figure 1 c,d), silica particle-polymer hybrids [ 19 ], polymer particles [ 20 ] and films [ 21 ], composites (silica-Teflon [ 22 ], spirooxazine-doped polystyrene [ 23 , 24 ]), vinyltrimethoxy silane films [ 25 ], SiO 2 /TiO 2 particles [ 26 , 27 ], and TiO 2 film [ 28 ] and AlN x [ 29 ]. Although a single-layer (wavelength) ARC is desired in laser and photodiodes [ 30 ] and solar cells [ 31 ] the narrow band of the reflection dip makes it impractical for many applications such, eyeglasses and displays.…”
Section: Conventional Antireflective Coatings (Arcs)mentioning
confidence: 99%